Loading...

SURA8205T3G-GA01

Onsemi

SURA8205T3G-GA01 by Onsemi

SURA8205T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.03 us and max output current of 2 A. It is designed for high voltage ultra-fast recovery power applications, featuring a package style of small outline and operating temperature range from -65 to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 37,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

37,000

-

-

-

-

Flip Electronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Vyrian

USA . 4,249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,249

-

-

-

-

Digiode

USA . 142 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

142

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,083 parts In-Stock

1+ parts

$13.750

100+ parts

-

1k+ parts

-

10k+ parts

-

1,083

$13.750

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 10,159 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,159

-

-

-

-

SupplyDigital Components

Austria . 7,667 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,667

-

-

-

-

Kulean Microsystems

USA . 6,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,018

-

-

-

-

Problanco Electronics

Mexico . 4,309 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,309

-

-

-

-

UHIMA Technologies

Türkiye . 991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

991

-

-

-

-

Corphita

USA . 776 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

776

-

-

-

-

TANS Electronics

Latvia . 280 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

280

-

-

-

-

Corohmni

South Africa . 219 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

219

-

-

-

-

Overview

Experience the superior quality and reliability of Onsemi with the SURA8205T3G-GA01 diode rectifier. This high voltage ultra-fast recovery power diode offers unmatched performance and efficiency for a wide range of applications. With a maximum reverse recovery time of 0.03 us and maximum forward voltage of 0.94 V, this product delivers exceptional value and benefits to customers seeking high-performance electronic components. Trust Onsemi for top-of-the-line diodes that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the diode lightweight and durable, ensuring a longer lifespan.

Config: SINGLE

The single configuration simplifies the circuit design and reduces complexity in assembly.

Surface Mount: YES

Being surface mountable, this diode can be easily integrated onto circuit boards, saving space and facilitating automated assembly processes.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time ensures quick response in high voltage applications, improving overall efficiency.

Maximum Reverse Current: 2 uA

The low reverse current minimizes power loss and enhances the diode's performance in high voltage applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easier mounting and placement on circuit boards, optimizing space utilization.

Reverse Test Voltage: 50 V

With a reverse test voltage of 50 V, this diode is suitable for high voltage applications, providing reliable reverse voltage protection.

No. of Terminals: 2

Having only two terminals simplifies circuit connections and reduces the risk of errors during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving advantages and facilitates compact designs in electronic devices.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed for high voltage and ultra-fast power recovery applications, this diode is ideal for demanding electronic systems.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures stable performance even in environments with elevated temperatures.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows the diode to function reliably in cold environments without compromising its efficiency.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit connections and enhances the diode's compatibility with different circuit layouts.

Minimum Breakdown Voltage: 50 V

With a minimum breakdown voltage of 50 V, this diode offers robust protection against reverse voltage, ensuring the safety of connected components.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard indicates the diode's suitability for automotive applications, guaranteeing high quality and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts alternating current (AC) to direct current (DC), making it essential for various electronic circuits and power supplies.

Maximum Forward Voltage (VF): 0.94 V

The low maximum forward voltage drop of 0.94 V ensures minimal power loss and efficient operation in forward bias conditions.

Maximum Output Current: 2 A

With a maximum output current of 2 A, this diode can handle high current levels, making it suitable for power applications that require stable performance.

Terminal Form: C BEND

The C bend terminal form facilitates easy soldering and ensures secure electrical connections, enhancing the diode's reliability.

Maximum Repetitive Peak Reverse Voltage: 50 V

The 50 V maximum repetitive peak reverse voltage rating ensures the diode's reliability and safety in applications with varying reverse voltages.

Maximum Non Repetitive Peak Forward Current: 50 A

The high maximum non-repetitive peak forward current of 50 A enables the diode to withstand short-term peak currents without damage, ensuring robust performance in transient conditions.

Diode Element Material: SILICON

Being made of silicon, a widely used semiconductor material, this diode exhibits excellent electrical properties, reliability, and performance in various circuit applications.

Technical Specifications

Diodes & Rectifiers SURA8205T3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.94 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.03 us

Reverse Test Voltage:

50 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19