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SURA8130T3G

Onsemi

SURA8130T3G by Onsemi

SURA8130T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.065 us and max output current of 2 A. It is designed for high voltage ultra-fast recovery power applications, featuring a package style of small outline and terminal finish of matte tin (Sn) - annealed.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 65,000 parts In-Stock

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USA . 65,000 parts In-Stock

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Vyrian

USA . 1,980 parts In-Stock

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USA . 65,000 parts In-Stock

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Digiode

USA . 152 parts In-Stock

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Corohmni

South Africa . 151 parts In-Stock

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Component Stockers USA

USA . 597 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 72,540 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

Germany . 6,540 parts In-Stock

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Problanco Electronics

Mexico . 5,318 parts In-Stock

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GreenTree Electronics

Israel . 3,905 parts In-Stock

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TANS Electronics

Latvia . 3,462 parts In-Stock

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Kulean Microsystems

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Corphita

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SupplyDigital Components

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UHIMA Technologies

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Overview

Discover the reliable and high-quality SURA8130T3G diode by Onsemi, a leading manufacturer in the industry. This rectifier diode is perfect for high voltage ultra-fast recovery power applications, offering customers exceptional value and performance. With a maximum reverse recovery time of 0.065 us and a maximum forward voltage of 1.1V, this diode provides efficient power conversion. Trust Onsemi to deliver top-of-the-line products that meet your needs with precision and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the diode, ensuring a long lifespan and reliability.

Maximum Reverse Recovery Time: 0.065 us

The ultra-fast reverse recovery time allows for efficient and responsive switching, making this diode suitable for high voltage applications.

Maximum Reverse Current: 5 uA

Low reverse current ensures minimal power loss and improved efficiency in the circuit.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions and extended use without performance degradation.

Maximum Output Current: 2 A

Capable of handling a high output current, making it suitable for power applications that require reliable performance under load.

Technical Specifications

Diodes & Rectifiers SURA8130T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.065 us

Reverse Test Voltage:

300 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURA8130T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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