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SURA8240T3G

Onsemi

SURA8240T3G by Onsemi

SURA8240T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.065 us and max forward voltage of 1.3V. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, making it suitable for various electronic devices requiring efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Velocity Electronics

USA . 30,000 parts In-Stock

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Chip Stock

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Vyrian

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Digiode

USA . 2,214 parts In-Stock

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AZTECH Wire

Italy . 582 parts In-Stock

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$13.220

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Perfect Parts

USA . 1,690,998 parts In-Stock

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Epart123

USA . 30,000 parts In-Stock

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$0.650

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Problanco Electronics

Mexico . 8,267 parts In-Stock

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Kulean Microsystems

USA . 7,357 parts In-Stock

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TANS Electronics

Latvia . 3,926 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 674 parts In-Stock

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Corohmni

South Africa . 414 parts In-Stock

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SupplyDigital Components

Austria . 303 parts In-Stock

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Overview

Unleash the power of high voltage applications with the SURA8240T3G diode by Onsemi. Designed for ultra-fast recovery power, this product offers top-notch quality and reliability that you can trust. With a maximum reverse recovery time of only 0.065 us and a maximum output current of 2 A, this diode is perfect for a wide range of electronic projects. Whether you're working on power supplies, inverters, or motor drives, the SURA8240T3G delivers exceptional performance and value. Upgrade your designs with this cutting-edge rectifier diode and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring longevity and reliability in various operating conditions.

Config: SINGLE

Simplifies the design and installation process, making it easier to integrate into electronic circuits.

Surface Mount: YES

Allows for efficient PCB mounting, saving space and enabling high-density circuit designs.

Maximum Reverse Recovery Time: 0.065 us

Ensures fast switching speed and efficiency, ideal for high voltage power applications.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves overall performance of the diode.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on the PCB, enhancing manufacturing efficiency.

No. of Terminals: 2

Simplified two-terminal design for easy connection and integration into electronic circuits.

Package Style (Meter): SMALL OUTLINE

Compact form factor saves space on the PCB and allows for high-density circuit designs.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed for high voltage applications requiring fast recovery time, making it suitable for power electronics.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliability under various environmental conditions.

Minimum Operating Temperature: -65 °C

Can operate in extreme cold temperatures, suitable for a wide range of applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides corrosion resistance and ensures stable electrical connections for long-term performance.

Terminal Position: DUAL

Dual terminal configuration allows for flexibility in mounting and connection options.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability, suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification of AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop minimizes power loss and improves efficiency of the diode.

Maximum Output Current: 2 A

Capable of handling high output currents, suitable for power applications.

Terminal Form: J BEND

J bend terminal design facilitates easy soldering and connection in the PCB assembly process.

Maximum Repetitive Peak Reverse Voltage: 400 V

Can withstand high reverse voltages, suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 35 A

Can handle short-term peak currents, providing overcurrent protection in the circuit.

Diode Element Material: SILICON

Silicon material offers high reliability and performance in diode applications, ensuring long-term stability.

Technical Specifications

Diodes & Rectifiers SURA8240T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURA8240T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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