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SURA8240T3G-GA01

Onsemi

SURA8240T3G-GA01 by Onsemi

SURA8240T3G-GA01 by Onsemi is a single diode with a reverse test voltage of 400V and max forward voltage of 1.3V. It has a fast recovery time of 0.065us, making it suitable for high voltage applications requiring up to 2A output current. The diode is designed for use in automotive electronics due to its AEC-Q101 reference standard compliance.

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AZTECH Wire

Italy . 392 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,542 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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Corphita

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TANS Electronics

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UHIMA Technologies

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Overview

Experience the power of the SURA8240T3G-GA01 by Onsemi, a top-quality rectifier diode designed for high voltage ultra-fast recovery power applications. Onsemi, a trusted manufacturer in the industry, delivers reliability and performance in every product they create. With a maximum output current of 2A and a maximum reverse recovery time of 0.065 us, this diode offers superior efficiency and precision. Whether you're working on automotive electronics or industrial equipment, the SURA8240T3G-GA01 provides the value and benefits you need to succeed. Elevate your projects with the best in class technology from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Reverse Recovery Time: 0.065 us

The fast reverse recovery time allows for efficient switching and minimizes power loss in high voltage applications.

Reverse Test Voltage: 400 V

With a high reverse test voltage, this diode is suitable for use in high voltage circuits where reliable performance is vital.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range allows for reliable performance even in extreme temperature environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed for converting AC to DC power, making it ideal for various power supply applications.

Technical Specifications

Diodes & Rectifiers SURA8240T3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

400 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.065 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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