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SURA8140T3G

Onsemi

SURA8140T3G by Onsemi

SURA8140T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.065 us and max output current of 2A. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a matte tin terminal finish.

Median Price

$0.226

Lifecycle Status

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15

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1k+

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Arrow

USA . 1,574 parts In-Stock

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$0.154

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Rochester

USA . 342,000 parts In-Stock

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$0.306

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$0.254

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$0.227

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$0.306

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$0.227

Verical

USA . 190,000 parts In-Stock

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$0.283

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DigiKey

USA . 10,000 parts In-Stock

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Chip1Stop

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Digiode

USA . 365 parts In-Stock

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Bristol Electronics

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Dan-Mar Components

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Vyrian

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ACDS - Activité Composants Distribution Service

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Sensible Micro Corp

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ComSIT Distribution GmbH

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Corphita

USA . 971 parts In-Stock

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$0.146

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Corohmni

South Africa . 229 parts In-Stock

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Component Stockers USA

USA . 259,066 parts In-Stock

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$0.230

AZTECH Wire

Italy . 382 parts In-Stock

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$14.330

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Continental Prestige Electronics

USA . 342,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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A-Z Elektronik GmbH

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

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Overview

Discover the SURA8140T3G by Onsemi, a top-of-the-line rectifier diode that stands out for its quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for high voltage ultra-fast recovery power applications. With a maximum reverse recovery time of 0.065 us and a maximum output current of 2 A, this diode offers unmatched performance and efficiency. Trust Onsemi to deliver cutting-edge technology and choose the SURA8140T3G for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various operating conditions.

Maximum Reverse Recovery Time: 0.065 us

Ensures fast switching performance, ideal for high frequency applications.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and increases efficiency.

Reverse Test Voltage: 400 V

Withstands high reverse voltages, making it suitable for high voltage applications.

Maximum Operating Temperature: 175 °C

Can operate in a wide temperature range, suitable for various environments.

Terminal Finish: Matte Tin (Sn) - annealed

Provides good electrical conductivity and corrosion resistance for reliable connections.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring optimal performance.

Maximum Output Current: 2 A

Capable of handling high current levels, suitable for power applications.

Technical Specifications

Diodes & Rectifiers SURA8140T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.065 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURA8140T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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