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SURA8260T3G-VF01

Onsemi

SURA8260T3G-VF01 by Onsemi

SURA8260T3G-VF01 by Onsemi is a single diode with a max output current of 2A and a max repetitive peak reverse voltage of 600V. It is used in applications requiring rectification or conversion of electrical signals.

Median Price

$0.270

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,984 parts In-Stock

1+ parts

$0.380

100+ parts

$0.244

1k+ parts

$0.179

10k+ parts

$0.134

1,984

$0.380

$0.244

$0.179

$0.134

Mouser Electronics

USA . 28,125 parts In-Stock

1+ parts

$0.430

100+ parts

$0.234

1k+ parts

$0.167

10k+ parts

$0.140

28,125

$0.430

$0.234

$0.167

$0.140

Verical

USA . 595,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.136

595,000

-

-

-

$0.136

Rochester

USA . 3,530 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.118

3,530

-

$0.159

$0.132

$0.118

Chip1Stop

Japan . 3 parts In-Stock

1+ parts

-

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3

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-

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Nova Conductors

Japan . 81 parts In-Stock

1+ parts

$0.169

100+ parts

-

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81

$0.169

-

-

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Digiode

USA . 773 parts In-Stock

1+ parts

$0.456

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773

$0.456

-

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Vyrian

USA . 6,628 parts In-Stock

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6,628

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.081

100+ parts

$0.074

1k+ parts

$0.066

10k+ parts

-

20

$0.081

$0.074

$0.066

-

Corohmni

South Africa . 343 parts In-Stock

1+ parts

$0.166

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343

$0.166

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.169

100+ parts

-

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$0.161

10k+ parts

$0.157

2,000

$0.169

-

$0.161

$0.157

Ampacity Inc.

Singapore . 6,510 parts In-Stock

1+ parts

$0.408

100+ parts

-

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6,510

$0.408

-

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Corphita

USA . 1,334 parts In-Stock

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$0.432

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1,334

$0.432

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QUARKTWIN TECHNOLOGY LTD

USA . 24,405 parts In-Stock

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24,405

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Problanco Electronics

Mexico . 6,902 parts In-Stock

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6,902

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Kulean Microsystems

USA . 5,635 parts In-Stock

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5,635

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Lixinc

USA . 4,051 parts In-Stock

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4,051

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TANS Electronics

Latvia . 4,004 parts In-Stock

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4,004

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SupplyDigital Components

Austria . 2,620 parts In-Stock

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2,620

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UHIMA Technologies

Türkiye . 783 parts In-Stock

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783

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Discover the SURA8260T3G-VF01, an exceptional diode and rectifier designed by Onsemi. Known for their commitment to quality and innovation, Onsemi brings you a product that excels in performance, reliability, and longevity. With its compact and versatile design, this diode is perfect for a wide range of applications. Whether you're working on power supply circuits, battery chargers, or voltage regulators, the SURA8260T3G-VF01 offers unmatched value and benefits. Its maximum output current of 2A and maximum repetitive peak reverse voltage of 600V ensure efficient and effective operation. Experience the advantages of Onsemi's expertise with the SURA8260T3G-VF01 - a truly remarkable product that delivers exceptional results every time.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material offers durability and resistance to external factors, making the diode more reliable and suitable for various environments.

Config:

SINGLE - The single configuration simplifies the installation process and reduces complexity, making it easier to incorporate into circuit designs.

Surface Mount:

YES - With surface mount capability, this diode can be easily mounted onto circuit boards, saving space and enabling efficient assembly.

Package Shape:

RECTANGULAR - The rectangular package shape provides structural stability and allows for organized placement on circuit boards, optimizing space utilization.

No. of Terminals:

2 - The two terminals make it simple to connect the diode within a circuit, enhancing ease of use and ensuring proper functionality.

Package Style (Meter):

SMALL OUTLINE - The small outline package style is compact and lightweight, allowing for efficient use of board space and facilitating portability.

Terminal Finish:

MATTE TIN - The matte tin terminal finish provides excellent solderability and enhances the diode's reliability by preventing oxidation.

Terminal Position:

DUAL - The dual terminal position offers flexible connections and ensures compatibility with various circuit configurations.

Maximum Time At Peak Reflow Temperature (s):

30 - This diode can withstand a peak reflow temperature for an extended period, enhancing its reliability during soldering processes.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature allows for secure and efficient soldering, promoting a strong and durable bond between the diode and the circuit board.

Maximum Output Current:

2 A - With a maximum output current of 2 A, this diode is capable of handling higher current demands, making it suitable for a wide range of applications.

Terminal Form:

C BEND - The C bend terminal form provides a reliable connection point and facilitates easy installation, ensuring proper electrical conductivity.

No. of Elements:

1 - With a single element, this diode simplifies circuit design and reduces complexity, ensuring seamless integration into various electronic systems.

Maximum Repetitive Peak Reverse Voltage:

600 V - The high maximum repetitive peak reverse voltage enables this diode to handle higher voltages, making it suitable for demanding applications.

Moisture Sensitivity Level (MSL):

1 - The moisture sensitivity level 1 indicates that this diode has a low likelihood of degradation due to moisture, ensuring long-term reliability in various environments.

No. of Phases:

1 - This diode has a single phase, simplifying circuit design and enhancing compatibility with various electrical systems.

Maximum Non Repetitive Peak Forward Current:

30 A - With a high maximum non-repetitive peak forward current of 30 A, this diode can handle transient spikes and surges, offering robust protection in demanding conditions.

Diode Element Material:

SILICON - The silicon diode element material provides excellent electrical properties, ensuring efficient and reliable performance in a wide range of applications.

Technical Specifications

Diodes & Rectifiers SURA8260T3G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214CA

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

600 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURA8260T3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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