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SURA8220T3G

Onsemi

SURA8220T3G by Onsemi

SURA8220T3G by Onsemi is a single diode with a reverse test voltage of 200V and max forward voltage of 0.95V. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C. This small outline rectifier diode has a max output current of 2A and non-repetitive peak forward current of 40A.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 78,000 parts In-Stock

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Sensible Micro Corp

USA . 25,449 parts In-Stock

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Vyrian

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Digiode

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.053

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$0.048

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$0.043

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200

$0.053

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AZTECH Wire

Italy . 476 parts In-Stock

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$17.120

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Component Stockers USA

USA . 454 parts In-Stock

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$99.990

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RC Electronics

USA . 51,601 parts In-Stock

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Perfect Parts

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ChipstoGo Electronic ltd

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GreenTree Electronics

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TANS Electronics

Latvia . 8,245 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,172 parts In-Stock

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Kulean Microsystems

USA . 6,943 parts In-Stock

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Problanco Electronics

Mexico . 3,322 parts In-Stock

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SupplyDigital Components

Austria . 3,106 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 328 parts In-Stock

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Corohmni

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Overview

Experience the exceptional quality and reliability of the SURA8220T3G diode by Onsemi, a trusted manufacturer in the industry. This diode, designed for high voltage ultra fast recovery power applications, offers customers unparalleled performance and efficiency. With a maximum reverse recovery time of 0.035 us and a maximum output current of 2A, this diode is a game-changer for your electronic projects. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplified design with a single configuration for easy installation and use.

Surface Mount: YES

Allows for easy and efficient surface mounting on PCBs, saving space and simplifying assembly.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast recovery time ensures efficient operation and minimal power loss.

Maximum Reverse Current: 2 uA

Low reverse current ensures minimal leakage and efficient performance.

Maximum Operating Temperature: 175 °C

Capable of operating in high temperature environments, making it suitable for a wide range of applications.

Minimum Operating Temperature: -65 °C

Capable of operating in low temperature environments, ensuring reliable performance in various conditions.

Diode Type: RECTIFIER DIODE

Designed specifically for rectifying AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.95 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 2 A

Capable of handling high output currents for power applications.

Technical Specifications

Diodes & Rectifiers SURA8220T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURA8220T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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