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SURA8260T3G-GA01

Onsemi

SURA8260T3G-GA01 by Onsemi

SURA8260T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.075 us and a max reverse current of 5 uA. It is designed for high voltage ultra-fast recovery power applications, featuring a max operating temperature of 175 °C and a min breakdown voltage of 600 V.

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Problanco Electronics

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SupplyDigital Components

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Overview

Enhance your power applications with the SURA8260T3G-GA01 by Onsemi. This high-quality rectifier diode offers ultra-fast recovery power, making it perfect for high voltage operations. With a maximum reverse test voltage of 600V and a small outline package style, this diode delivers exceptional performance and reliability. Trust in Onsemi's expertise in diodes and rectifiers to bring value and benefits to your projects. Elevate your designs with the SURA8260T3G-GA01 and experience the advantage of superior quality components from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, making it durable and reliable.

Maximum Reverse Recovery Time: 0.075 us

The fast reverse recovery time ensures efficient operation and high-speed switching capabilities.

Reverse Test Voltage: 600 V

The high reverse test voltage makes this diode suitable for high voltage applications.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed for high voltage applications requiring ultra fast recovery power, making it ideal for demanding power electronics systems.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand tough environmental conditions.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC power efficiently.

Maximum Forward Voltage (VF): 1.45 V

The low forward voltage drop helps minimize power loss and improves overall efficiency.

Technical Specifications

Diodes & Rectifiers SURA8260T3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

600 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.45 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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