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SURA8120T3G

Onsemi

SURA8120T3G by Onsemi

SURA8120T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.035 us and max output current of 2 A. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, making it suitable for various electronic devices.

Median Price

$0.309

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 845,155 parts In-Stock

1+ parts

-

100+ parts

$0.321

1k+ parts

$0.266

10k+ parts

$0.237

845,155

-

$0.321

$0.266

$0.237

Verical

USA . 845,000 parts In-Stock

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-

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$0.297

845,000

-

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$0.297

DigiKey

USA . 10,000 parts In-Stock

1+ parts

-

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$0.250

10,000

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$0.250

Flip Electronics (Authorized)

USA . 8,000 parts In-Stock

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8,000

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Farnell

UK . 155 parts In-Stock

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$0.390

155

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$0.390

Distributors (In-Stock)

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Digiode

USA . 325 parts In-Stock

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$0.250

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325

$0.250

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.265

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150

$0.265

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Cyclops Electronics Ltd

UK . 44,770 parts In-Stock

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44,770

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Chip Stock

USA . 37,400 parts In-Stock

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37,400

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LIBRA Elektronik GmbH

Germany . 25,000 parts In-Stock

1+ parts

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25,000

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Flip Electronics

USA . 8,000 parts In-Stock

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Vyrian

USA . 4,482 parts In-Stock

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4,482

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Bristol Electronics

USA . 730 parts In-Stock

1+ parts

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100+ parts

$0.487

1k+ parts

$0.240

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730

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$0.487

$0.240

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Microfarads

USA . 690 parts In-Stock

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690

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 143 parts In-Stock

1+ parts

$0.030

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143

$0.030

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Ampacity Inc.

Singapore . 8,469 parts In-Stock

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$0.212

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8,469

$0.212

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Corphita

USA . 1,100 parts In-Stock

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$0.237

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1,100

$0.237

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Corohmni

South Africa . 286 parts In-Stock

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$0.250

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286

$0.250

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Continental Prestige Electronics

USA . 1,302 parts In-Stock

1+ parts

$0.265

100+ parts

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$0.260

1,302

$0.265

-

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$0.260

Argo Parts USA

USA . 1,028 parts In-Stock

1+ parts

$0.265

100+ parts

-

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$0.257

1,028

$0.265

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$0.257

RC Electronics

USA . 200,000 parts In-Stock

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Kepictronics

USA . 72,540 parts In-Stock

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ChipstoGo Electronic ltd

UK . 40,000 parts In-Stock

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Problanco Electronics

Mexico . 6,251 parts In-Stock

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SupplyDigital Components

Austria . 5,247 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Kulean Microsystems

USA . 1,828 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.260

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$0.252

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$0.246

1,000

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$0.260

$0.252

$0.246

UHIMA Technologies

Türkiye . 674 parts In-Stock

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674

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TANS Electronics

Latvia . 41 parts In-Stock

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Overview

Discover the powerful SURA8120T3G diode by Onsemi, a top-tier manufacturer renowned for its high-quality components. Ideal for high voltage ultra-fast recovery power applications, this single-configured diode offers unparalleled performance and reliability. With a maximum reverse recovery time of 0.035 us and maximum forward voltage of 0.875 V, this diode ensures efficient energy conversion with minimal reverse current. Whether you're in the automotive, industrial, or consumer electronics industry, the SURA8120T3G is the perfect solution for your power management needs. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on PCBs.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time ensures efficient operation and minimizes losses in high-speed circuits.

Maximum Reverse Current: 2 uA

Low reverse current improves the efficiency and reliability of the diode in preventing reverse flow of current.

Package Shape: RECTANGULAR

Rectangular shape enables easy handling and placement of the diode in electronic assemblies.

No. of Terminals: 2

Having two terminals simplifies the connection of the diode in the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for dense circuit designs.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed for high voltage applications requiring ultra-fast recovery power, making it suitable for power electronics and high-speed circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable operation in various environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can function in cold environments without issues.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and easy soldering in the circuit.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is specifically designed for converting AC to DC current efficiently.

Maximum Forward Voltage (VF): 0.875 V

Low forward voltage drop ensures minimal power loss and efficient conversion in the circuit.

Maximum Output Current: 2 A

High output current capacity makes the diode suitable for power applications requiring higher current ratings.

Terminal Form: J BEND

J Bend terminal form allows for easy manual or automated soldering processes during assembly.

Maximum Repetitive Peak Reverse Voltage: 200 V

High repetitive peak reverse voltage rating provides protection against reverse voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 40 A

High non-repetitive peak forward current handling capability ensures the diode can withstand transient current surges.

Diode Element Material: SILICON

Silicon diode element material offers high performance, reliability, and efficiency for power applications.

Technical Specifications

Diodes & Rectifiers SURA8120T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.875 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURA8120T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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