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NRVUS160VT3G-GA01

Onsemi

NRVUS160VT3G-GA01 by Onsemi

NRVUS160VT3G-GA01 by Onsemi is a single diode with 600V reverse test voltage and 0.075us reverse recovery time. Ideal for high voltage ultra-fast power applications, it has a max output current of 2A and operates b/w -65 to 175 °C.

Median Price

$0.186

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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NAC Semi

USA . 80,000 parts In-Stock

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Chip Stock

USA . 68,000 parts In-Stock

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Flip Electronics

USA . 5,000 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

Japan . 10 parts In-Stock

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Ampacity Inc.

Singapore . 377 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 233 parts In-Stock

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SupplyDigital Components

Austria . 7,675 parts In-Stock

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Kulean Microsystems

USA . 6,863 parts In-Stock

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TANS Electronics

Latvia . 6,796 parts In-Stock

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Problanco Electronics

Mexico . 3,167 parts In-Stock

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Corphita

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Aranea Global

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UHIMA Technologies

Türkiye . 991 parts In-Stock

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Corohmni

South Africa . 122 parts In-Stock

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Overview

Discover the NRVUS160VT3G-GA01 by Onsemi, a top-tier manufacturer known for delivering high-quality diodes & rectifiers. This single-configured, surface-mount diode boasts a maximum reverse recovery time of just 0.075 us and a maximum reverse current of 5 uA, making it ideal for high voltage ultra fast recovery power applications. With a package shape designed for efficiency and a reference standard of AEC-Q101, this rectifier diode offers exceptional value and performance. Trust Onsemi to provide reliable solutions for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the diode, ensuring durability and reliability.

Maximum Reverse Recovery Time: 0.075 us

Allows for high-speed switching, making it suitable for applications requiring fast response times.

Maximum Reverse Current: 5 uA

Ensures minimal leakage current in the reverse direction, improving efficiency.

Reverse Test Voltage: 600 V

Suitable for high voltage applications, ensuring reliable operation under high voltage conditions.

Maximum Operating Temperature: 175 °C

Can withstand high operating temperatures, making it suitable for a wide range of environments.

Minimum Operating Temperature: -65 °C

Can operate in low temperature conditions, offering versatility in various applications.

Maximum Output Current: 2 A

Capable of handling relatively high output currents, suitable for powering a variety of devices.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification purposes, ensuring efficient conversion of AC to DC.

Technical Specifications

Diodes & Rectifiers NRVUS160VT3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

600 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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