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SURS8260T3G-GA01

Onsemi

SURS8260T3G-GA01 by Onsemi

SURS8260T3G-GA01 by Onsemi is a single diode with 600V reverse test voltage, 0.075us reverse recovery time, and 5uA reverse current. Ideal for high voltage ultra-fast power applications with max operating temp of 175 °C. Package style: small outline, surface mountable.

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Overview

Elevate your power supply designs with the SURS8260T3G-GA01 by Onsemi, a high-quality rectifier diode that offers unparalleled performance and reliability. Manufactured by the trusted brand Onsemi, this diode is perfect for high voltage ultra-fast recovery power applications. With a maximum reverse recovery time of 0.075 us and a maximum reverse current of 5 uA, this diode ensures efficient operation and optimal energy conversion. Experience peace of mind knowing that this diode meets AEC-Q101 standards and can handle a maximum repetitive peak reverse voltage of 600 V. Upgrade your electronic projects with the SURS8260T3G-GA01 and unlock a world of possibilities!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the circuit design and installation process.

Surface Mount: YES

Surface mount feature allows for easy installation on PCBs, saving space and improving efficiency.

Maximum Reverse Recovery Time: 0.075 us

The ultra-fast reverse recovery time ensures high efficiency and performance in high voltage applications.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power losses and improves overall efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment in circuits.

Reverse Test Voltage: 600 V

High reverse test voltage provides reliable and safe operation in high voltage environments.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and enhances the overall functionality of the diode.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact design integration.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Specifically designed for high voltage applications requiring ultra fast recovery power, making it a reliable and efficient choice.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of temperature conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit configuration and installation.

Minimum Breakdown Voltage: 600 V

High minimum breakdown voltage ensures protection against voltage surges and fluctuations.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is specifically designed for converting AC to DC, making it suitable for various power applications.

Maximum Forward Voltage (VF): 1.45 V

Low maximum forward voltage drop minimizes power losses and improves efficiency of the diode.

Maximum Output Current: 2 A

High maximum output current capacity allows for handling higher loads and power requirements.

Terminal Form: C BEND

C bend terminal form provides easy and secure connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 600 V

High maximum repetitive peak reverse voltage ensures reliable operation in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 35 A

High maximum non repetitive peak forward current capacity allows for handling sudden peak loads without damage.

Diode Element Material: SILICON

Silicon material for the diode element offers high efficiency and reliability in power applications.

Technical Specifications

Diodes & Rectifiers SURS8260T3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

600 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.45 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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