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NRVTSS3100ET3G-GA01

Onsemi

NRVTSS3100ET3G-GA01 by Onsemi

NRVTSS3100ET3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 5uA max reverse current, and 3A max output current. Ideal for efficiency applications, it operates b/w -55 to 175 °C and meets AEC-Q101 standard.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 60,000 parts In-Stock

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Vyrian

USA . 11,501 parts In-Stock

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Digiode

USA . 499 parts In-Stock

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499

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Nova Conductors

Japan . 78 parts In-Stock

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78

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Ampacity Inc.

Singapore . 1,316 parts In-Stock

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$3.010

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$3.010

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AZTECH Wire

Italy . 762 parts In-Stock

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$16.970

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Problanco Electronics

Mexico . 7,691 parts In-Stock

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SupplyDigital Components

Austria . 4,952 parts In-Stock

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Kulean Microsystems

USA . 2,615 parts In-Stock

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UHIMA Technologies

Türkiye . 991 parts In-Stock

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TANS Electronics

Latvia . 835 parts In-Stock

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Corohmni

South Africa . 400 parts In-Stock

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Corphita

USA . 193 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Experience unmatched quality and performance with the NRVTSS3100ET3G-GA01 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-of-the-line diodes and rectifiers that guarantee reliability and efficiency in various applications. From its superior design to its innovative technology, this product offers customers exceptional value and benefits. Whether you need it for automotive, industrial, or consumer electronics, this rectifier diode is the perfect solution for your needs. Trust Onsemi to provide you with the best in quality and performance.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the diode, making it suitable for various applications.

Config:

SINGLE - Simplifies overall design and installation process.

Surface Mount:

YES - Easy to mount on circuit boards, saving space and enhancing efficiency.

Maximum Reverse Current:

5 uA - Ensures minimal power loss and improved performance.

Package Shape:

RECTANGULAR - Facilitates easy installation and integration into circuitry.

Reverse Test Voltage:

100 V - Offers reliable protection against reverse voltage spikes.

No. of Terminals:

2 - Simplifies connectivity and reduces complexity in wiring.

Package Style (Meter):

SMALL OUTLINE - Space-saving design for compact electronic devices.

Application:

EFFICIENCY - Designed to enhance energy efficiency in various electronic systems.

Maximum Operating Temperature:

175 °C - Ensures reliable performance even in high-temperature environments.

Minimum Operating Temperature:

55 °C - Suitable for use in extreme cold conditions as well.

Terminal Position:

DUAL - Provides flexibility in circuit design and connectivity options.

Minimum Breakdown Voltage:

100 V - Ensures reliable operation under varying voltage conditions.

Reference Standard:

AEC-Q101 - Meets industry standards for quality and performance.

Diode Type:

RECTIFIER DIODE - Ideal for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF):

0.995 V - Low voltage drop ensures efficient power transfer.

Maximum Output Current:

3 A - Capable of handling moderate to high loads with ease.

Technology:

SCHOTTKY - Provides fast switching speed and low forward voltage drop.

Terminal Form:

C BEND - Facilitates easy soldering and secure connection in the circuit.

Maximum Repetitive Peak Reverse Voltage:

100 V - Offers reliable protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current:

90 A - Capable of handling high surges in current without damage.

Diode Element Material:

SILICON - Provides durability and reliability for long-term use.

Technical Specifications

Diodes & Rectifiers NRVTSS3100ET3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Minimum Breakdown Voltage:

100 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.995 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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