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MBRS320PT3G

Onsemi

MBRS320PT3G by Onsemi

MBRS320PT3G by Onsemi is a Schottky rectifier diode with 20V reverse voltage and 4A output current. It operates b/w -65 °C to 150°C, making it ideal for power applications. This single-configured diode comes in a small outline package suitable for surface mount technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 12,744 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 599 parts In-Stock

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$14.430

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QUARKTWIN TECHNOLOGY LTD

USA . 21,973 parts In-Stock

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Problanco Electronics

Mexico . 7,699 parts In-Stock

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Kulean Microsystems

USA . 7,110 parts In-Stock

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Corphita

USA . 1,804 parts In-Stock

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TANS Electronics

Latvia . 1,687 parts In-Stock

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SupplyDigital Components

Austria . 1,181 parts In-Stock

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Corohmni

South Africa . 403 parts In-Stock

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UHIMA Technologies

Türkiye . 56 parts In-Stock

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Overview

Experience the power and reliability of the Onsemi MBRS320PT3G diode rectifier. Manufactured by Onsemi, a trusted name in the industry, this product is ideal for power applications with its high-quality construction and cutting-edge technology. With a maximum output current of 4A and a maximum forward voltage of 0.5V, this diode offers superior performance and efficiency. Whether you're in need of a reliable component for your next project or looking to upgrade your existing power system, the Onsemi MBRS320PT3G is the perfect choice for delivering consistent and dependable results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Maximum Reverse Current: 2000 uA

Ensures efficient and reliable operation of the diode under various conditions.

Package Style (Meter): SMALL OUTLINE

Contributes to compact design and easy integration into different power applications.

Maximum Operating Temperature: 150 °C

Suitable for high-temperature environments, ensuring stable performance under heat stress.

Diode Type: RECTIFIER DIODE

Efficiently converts AC to DC in power applications, making it versatile for various electronic circuits.

Maximum Output Current: 4 A

Can handle high current loads, making it suitable for power applications that require robust performance.

Technology: SCHOTTKY

Provides low forward voltage drop and fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBRS320PT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

2000 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS320PT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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