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NRVUS2GA

Onsemi

NRVUS2GA by Onsemi

NRVUS2GA by Onsemi is a single diode with PLASTIC/EPOXY body, ideal for SUPER FAST RECOVERY applications. It features 0.075 us reverse recovery time, 5 uA reverse current, and 400 V reverse test voltage. Suitable for high-speed rectification tasks with operating temperatures ranging from -55 to 150 °C.

Median Price

$0.026

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 300 parts In-Stock

1+ parts

$0.026

100+ parts

$0.024

1k+ parts

$0.021

10k+ parts

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300

$0.026

$0.024

$0.021

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,140 parts In-Stock

1+ parts

$0.025

100+ parts

-

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1,140

$0.025

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Vyrian

USA . 5,620 parts In-Stock

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5,620

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 494 parts In-Stock

1+ parts

$0.023

100+ parts

-

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494

$0.023

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Corohmni

South Africa . 498 parts In-Stock

1+ parts

$0.026

100+ parts

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498

$0.026

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$0.026

100+ parts

$0.024

1k+ parts

$0.021

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300

$0.026

$0.024

$0.021

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Component Stockers USA

USA . 43,604 parts In-Stock

1+ parts

$1.820

100+ parts

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43,604

$1.820

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AZTECH Wire

Italy . 580 parts In-Stock

1+ parts

$16.970

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580

$16.970

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Perfect Parts

USA . 23,990 parts In-Stock

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23,990

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Problanco Electronics

Mexico . 7,522 parts In-Stock

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7,522

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SupplyDigital Components

Austria . 5,570 parts In-Stock

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5,570

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TANS Electronics

Latvia . 3,359 parts In-Stock

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3,359

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Kulean Microsystems

USA . 2,712 parts In-Stock

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2,712

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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568

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Overview

Elevate your electronic projects with the NRVUS2GA diode by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology in the Diodes & Rectifiers category. Whether you're working on a super fast recovery application or need a component for high-performance circuits, this diode offers unmatched value and performance. With a maximum reverse recovery time of 0.075 us and a maximum output current of 1.5 A, the NRVUS2GA is the perfect choice for your next project. Upgrade to Onsemi and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight construction, making it suitable for a variety of applications.

Config: SINGLE

Simplifies the design and installation process by only requiring one diode.

Surface Mount: YES

Allows for easy mounting onto circuit boards, saving space and simplifying the assembly process.

Maximum Reverse Recovery Time: 0.075 us

Ensures fast switching and efficiency in high-speed applications.

Maximum Reverse Current: 5 uA

Provides low leakage current, enhancing the overall performance of the diode.

Package Shape: RECTANGULAR

Facilitates easy integration into circuit layouts and designs.

Reverse Test Voltage: 400 V

Ensures reliable and safe operation in high voltage environments.

No. of Terminals: 2

Simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Allows for efficient use of space on the circuit board, ideal for compact designs.

Application: SUPER FAST RECOVERY

Suitable for high-speed applications that require quick and efficient recovery times.

Technical Specifications

Diodes & Rectifiers NRVUS2GA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

SUPER FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUS2GA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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