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MBRS360PT3G

Onsemi

MBRS360PT3G by Onsemi

MBRS360PT3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.63V. It operates b/w -65 to 175°C, has a reverse test voltage of 60V, and is ideal for surface mount applications in electronics requiring high-speed switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,382 parts In-Stock

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Digiode

USA . 1,789 parts In-Stock

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LWI Electronics Inc

India . 25 parts In-Stock

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25

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Nova Conductors

Japan . 10 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 5,654 parts In-Stock

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$0.040

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5,654

$0.040

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Semicontronic

India . 638 parts In-Stock

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$1.010

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$0.985

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$0.980

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638

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 1,488 parts In-Stock

1+ parts

$2.010

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1,488

$2.010

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AZTECH Wire

Italy . 346 parts In-Stock

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$17.161

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RC Electronics

USA . 79,675 parts In-Stock

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Kulean Microsystems

USA . 6,662 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Problanco Electronics

Mexico . 3,025 parts In-Stock

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Perfect Parts

USA . 2,514 parts In-Stock

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SupplyDigital Components

Austria . 2,353 parts In-Stock

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TANS Electronics

Latvia . 1,772 parts In-Stock

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Corphita

USA . 1,696 parts In-Stock

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Continental Prestige Electronics

USA . 1,251 parts In-Stock

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Argo Parts USA

USA . 1,023 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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250

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Lucentia Tech

USA . 250 parts In-Stock

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$0.253

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$0.253

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$0.253

250

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$0.253

$0.253

$0.253

Corohmni

South Africa . 223 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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UHIMA Technologies

Türkiye . 49 parts In-Stock

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Overview

Looking for a reliable and high-quality diode for your electronic projects? Look no further than the MBRS360PT3G by Onsemi. With its advanced technology, this Schottky rectifier diode offers superior performance and efficiency. Whether you're working on power supplies, converters, or battery chargers, this diode is perfect for a wide range of applications. Trust in Onsemi's reputation for excellence and choose the MBRS360PT3G for unbeatable value and reliability in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection to the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into different electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing production costs.

Maximum Reverse Current: 30 uA

Low maximum reverse current ensures minimal power loss and improved efficiency in electronic systems.

Package Shape: RECTANGULAR

Rectangular package shape offers easy handling and placement on circuit boards, enhancing manufacturability.

Reverse Test Voltage: 60 V

With a reverse test voltage of 60V, this diode provides reliable protection against reverse voltage conditions.

No. of Terminals: 2

Having two terminals simplifies the connection process, making it user-friendly for integrators and technicians.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact electronic designs.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures the diode can withstand harsh environmental conditions without performance degradation.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for reliable performance even in extreme cold environments.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring secure connections during assembly.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connection options, enabling versatile use in different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature minimizes the risk of thermal damage during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for efficient soldering and durable connections for long-term reliability.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC currents efficiently, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.63 V

Low maximum forward voltage ensures energy efficiency and minimal power loss in electronic circuits.

Maximum Output Current: 3 A

High maximum output current capacity allows the diode to handle heavy loads and power requirements in various applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, making the diode ideal for high-frequency applications.

Terminal Form: C BEND

C-bend terminal form provides mechanical stability and secure positioning during installation, minimizing the risk of damage.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage ensures reliable operation and protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 125 A

High maximum non-repetitive peak forward current capacity allows the diode to handle surge currents and protect against overload conditions.

Diode Element Material: SILICON

Silicon diode element material offers stable performance, high temperature tolerance, and low leakage current, ensuring long-term reliability.

Technical Specifications

Diodes & Rectifiers MBRS360PT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.63 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

125 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

30 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS360PT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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