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MBRS330PT3G

Onsemi

MBRS330PT3G by Onsemi

MBRS330PT3G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.5V. It operates in temperatures ranging from -65 °C to 150°C, making it suitable for power applications. This single-configured diode comes in a small outline package with dual terminals for surface mount assembly.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,059 parts In-Stock

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Digiode

USA . 2,036 parts In-Stock

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2,036

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Ampacity Inc.

Singapore . 1,574 parts In-Stock

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$1.010

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1,574

$1.010

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AZTECH Wire

Italy . 457 parts In-Stock

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$9.990

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457

$9.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,123 parts In-Stock

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TANS Electronics

Latvia . 8,034 parts In-Stock

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Kulean Microsystems

USA . 6,680 parts In-Stock

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6,680

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Kepictronics

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,593 parts In-Stock

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SupplyDigital Components

Austria . 2,159 parts In-Stock

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Corphita

USA . 1,279 parts In-Stock

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Futuretech Components

Singapore . 936 parts In-Stock

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Corohmni

South Africa . 400 parts In-Stock

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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Overview

Discover the MBRS330PT3G by Onsemi, a high-quality rectifier diode designed for power applications. With its advanced Schottky technology and maximum output current of 4A, this diode offers reliable performance and efficiency. Manufactured by Onsemi, a trusted name in the industry, this diode promises durability and precision. Ideal for a wide range of applications, from consumer electronics to industrial machinery, the MBRS330PT3G ensures optimal power management and protection. Upgrade your projects with this versatile and dependable diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good mechanical strength and thermal resistance, making the diode durable and reliable for long-term use.

Config: SINGLE

Single configuration simplifies the design and installation process, making it ideal for applications where space is limited.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Current: 2000 uA

Low maximum reverse current indicates improved efficiency and reduced power losses in the circuit.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and secure mounting of the diode in various electronic devices.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces the risk of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting in compact electronic devices.

Application: POWER

Designed for power applications, this diode is suitable for handling high current and voltage requirements efficiently.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the diode can withstand elevated temperatures without performance degradation.

Minimum Operating Temperature: -65 °C

Wide temperature range allows the diode to operate in extreme cold conditions, increasing its versatility for various applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for easy connection to external components.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes the risk of thermal damage to the diode during the soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature enables quick and efficient soldering of the diode onto the PCB.

Diode Type: RECTIFIER DIODE

Rectifier diode type is well-suited for converting AC to DC power and provides efficient rectification in various electronic circuits.

Maximum Forward Voltage (VF): 0.5 V

Low maximum forward voltage drop results in minimal power dissipation and improved energy efficiency.

Maximum Output Current: 4 A

High maximum output current rating allows the diode to handle heavy loads and deliver sufficient power to connected devices.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching characteristics, ideal for high frequency applications.

Terminal Form: C BEND

C bend terminal form offers mechanical stability and ease of soldering during assembly, ensuring a secure connection.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable for applications requiring reverse voltage protection up to 30V, providing reliable overvoltage protection in the circuit.

Maximum Non Repetitive Peak Forward Current: 80 A

High maximum non-repetitive peak forward current rating ensures the diode can withstand short-duration overload conditions without damage.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, good thermal conductivity, and low leakage current, making it a durable and efficient choice for various applications.

Technical Specifications

Diodes & Rectifiers MBRS330PT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

2000 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS330PT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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