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MURS140HE3_A/I

Vishay Intertechnology

MURS140HE3_A/I by Vishay Intertechnology

Vishay Intertechnology's MURS140HE3_A/I is a single rectifier diode with a max reverse recovery time of 0.075 us and max output current of 2 A. It operates efficiently in temperatures ranging from -65 to 175 °C, making it suitable for various applications requiring high voltage protection and low forward voltage drop.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,104 parts In-Stock

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6,104

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Corohmni

South Africa . 53 parts In-Stock

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$0.042

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53

$0.042

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Aztec Data Supply Inc.

USA . 2,491 parts In-Stock

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$0.119

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$0.119

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Semicontronic

India . 567 parts In-Stock

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$1.010

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$0.985

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$0.980

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567

$1.010

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$0.980

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Component Stockers USA

USA . 31,959 parts In-Stock

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$1.920

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$1.920

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Ampacity Inc.

Singapore . 863 parts In-Stock

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$2.010

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863

$2.010

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AZTECH Wire

Italy . 653 parts In-Stock

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$19.236

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653

$19.236

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Continental Prestige Electronics

USA . 6,034 parts In-Stock

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Argo Parts USA

USA . 4,336 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Discover the unmatched quality and reliability of the MURS140HE3_A/I diode by Vishay Intertechnology. This innovative product boasts a single configuration, surface mount capability, and a wide operating temperature range, making it ideal for efficiency-driven applications. With a maximum forward voltage of 1.25V and a maximum output current of 2A, this rectifier diode offers superior performance and value to customers seeking top-tier electronic components. Experience the difference with Vishay Intertechnology's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is known for its durability and resistance to high temperatures, making the diode reliable in various operating conditions.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it easier to integrate into electronic systems.

Surface Mount: YES

Being surface mountable allows for easier and more efficient assembly onto circuit boards, saving valuable space and enhancing overall reliability.

Maximum Reverse Recovery Time: 0.075 us

The fast reverse recovery time ensures minimal power loss and efficient switching, making this diode suitable for high-speed applications.

Maximum Reverse Current: 5 uA

The low reverse current indicates high efficiency and minimal leakage, ensuring the diode operates effectively in both forward and reverse bias conditions.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, making it ideal for space-constrained applications while also enabling efficient heat dissipation.

No. of Terminals: 2

Having only two terminals simplifies the connection process and enhances overall reliability, making the diode easier to handle and install.

Package Style (Meter): SMALL OUTLINE

The small outline package style further reduces the footprint of the diode, allowing for high-density circuit board designs and efficient use of space.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where energy savings and optimal performance are critical factors.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, making it suitable for various environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures the diode functions reliably even in extreme cold conditions, offering versatility in different operating environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and promotes good solderability, ensuring a reliable electrical connection in various applications.

Terminal Position: DUAL

The dual terminal position allows flexibility in circuit board layout and connection options, making it convenient for different installation scenarios.

Peak Reflow Temperature °C: 260

The high peak reflow temperature indicates the diode's ability to withstand the solder reflow process during assembly without degradation, ensuring long-term reliability.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that the diode meets stringent automotive industry requirements for reliability and performance, making it suitable for automotive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC current efficiently, making it a reliable choice for rectification applications.

Maximum Forward Voltage (VF): 1.25 V

The low maximum forward voltage drop minimizes power loss and improves efficiency, making the diode ideal for applications where energy conservation is key.

Maximum Output Current: 2 A

With a high maximum output current rating, this diode can handle substantial current loads while maintaining stable operation, making it suitable for power applications.

Terminal Form: C BEND

The C bend terminal form provides mechanical stability and secure connection points, ensuring reliable performance in various mounting configurations.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high repetitive peak reverse voltage rating indicates the diode's ability to handle reverse voltage without breakdown, making it suitable for high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 35 A

With a high non-repetitive peak forward current rating, this diode can withstand short-term current surges without damage, ensuring robust performance in demanding conditions.

Diode Element Material: SILICON

Silicon is a common semiconductor material known for its stable electrical properties and reliability, making this diode a durable and long-lasting component in electronic circuits.

Technical Specifications

Diodes & Rectifiers MURS140HE3_A/I attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MURS140HE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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