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MURS360BT3G

Onsemi

MURS360BT3G by Onsemi

MURS360BT3G by Onsemi is a single rectifier diode with a max output current of 3A and a max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage ultra-fast power applications. The diode operates in temperatures ranging from -65°C to 175°C and features a small outline package style for surface mount assembly.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$0.164

100+ parts

$0.156

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$0.156

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3,000

$0.164

$0.156

$0.156

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Farnell

UK . 6,143 parts In-Stock

1+ parts

$0.381

100+ parts

$0.159

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$0.120

10k+ parts

$0.103

6,143

$0.381

$0.159

$0.120

$0.103

Newark

USA . 1,431 parts In-Stock

1+ parts

$0.484

100+ parts

$0.329

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$0.282

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1,431

$0.484

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Mouser Electronics

USA . 40,249 parts In-Stock

1+ parts

$1.050

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$0.427

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$0.297

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$0.242

40,249

$1.050

$0.427

$0.297

$0.242

Verical

USA . 265,398 parts In-Stock

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265,398

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Rochester

USA . 265,398 parts In-Stock

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$0.262

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$0.217

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$0.194

265,398

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$0.262

$0.217

$0.194

DigiKey

USA . 68,751 parts In-Stock

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$0.223

68,751

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EBV Elektronik

Germany . 50,000 parts In-Stock

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Arrow

USA . 22,500 parts In-Stock

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Master Electronics

USA . 5,000 parts In-Stock

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$0.184

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$0.177

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Element14

Singapore . 3,101 parts In-Stock

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$0.428

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$0.360

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3,101

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Chip1Stop

Japan . 965 parts In-Stock

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Digiode

USA . 1,005 parts In-Stock

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$0.156

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Nova Conductors

Japan . 750 parts In-Stock

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$0.331

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750

$0.331

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Maritex

Poland . 1,883 parts In-Stock

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$0.366

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$0.195

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$0.184

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$0.167

1,883

$0.366

$0.195

$0.184

$0.167

Bristol Electronics

USA . 147 parts In-Stock

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$0.508

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$0.188

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147

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TME

Poland . 772 parts In-Stock

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$0.630

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$0.268

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$0.256

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$0.235

772

$0.630

$0.268

$0.256

$0.235

Cyclops Electronics Ltd

UK . 479,284 parts In-Stock

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IBS Electronics

USA . 122,500 parts In-Stock

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$0.259

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Chip Stock

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Vyrian

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NAC Semi

USA . 15,000 parts In-Stock

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Flip Electronics

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J2 Sourcing AB

Sweden . 6,400 parts In-Stock

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Sensible Micro Corp

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Martec Srl

Italy . 4,990 parts In-Stock

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Freddi Giovanni

Italy . 2,500 parts In-Stock

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4 Star Electronics, Inc.

USA . 2,500 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,415 parts In-Stock

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ComSIT USA

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LIBRA Elektronik GmbH

Germany . 198 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 147 parts In-Stock

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Dan-Mar Components

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PC Components Company LLC

USA . 55 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,135 parts In-Stock

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$0.135

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3,135

$0.135

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Ampacity Inc.

Singapore . 52,476 parts In-Stock

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$0.139

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52,476

$0.139

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Semicontronic

India . 51,999 parts In-Stock

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$0.139

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$0.136

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$0.135

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$0.139

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$0.135

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Corphita

USA . 227 parts In-Stock

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$0.148

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Corohmni

South Africa . 56 parts In-Stock

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$0.155

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56

$0.155

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.164

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$0.156

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3,000

$0.164

$0.156

$0.156

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Modulus Dynamics

Lithuania . 24,875 parts In-Stock

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$0.164

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$0.164

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$0.164

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Argo Parts USA

USA . 4,501 parts In-Stock

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$0.269

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$0.261

4,501

$0.269

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Aranea Global

USA . 2,000 parts In-Stock

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$0.325

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$0.312

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$0.325

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$0.312

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Component Stockers USA

USA . 336,580 parts In-Stock

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$0.490

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$0.310

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$0.230

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$0.170

336,580

$0.490

$0.310

$0.230

$0.170

Continental Prestige Electronics

USA . 4,428 parts In-Stock

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$0.574

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$0.336

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$0.212

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$0.574

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$0.212

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Perfect Parts

USA . 4,906,803 parts In-Stock

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Authorized Procurement Solutions

USA . 250,000 parts In-Stock

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GreenTree Electronics

Israel . 207,527 parts In-Stock

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Epart123

USA . 200,000 parts In-Stock

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$1.230

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Infinite Electronics LLP (Excess)

. 117,733 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 68,106 parts In-Stock

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$0.310

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$0.280

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$0.270

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$0.270

Kepictronics

USA . 58,500 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,159 parts In-Stock

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Glotronic Ltd.

UK . 12,000 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Lixinc

USA . 9,300 parts In-Stock

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TANS Electronics

Latvia . 7,782 parts In-Stock

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SupplyDigital Components

Austria . 7,454 parts In-Stock

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Kulean Microsystems

USA . 6,346 parts In-Stock

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Assy Fe

Spain . 2,440 parts In-Stock

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Problanco Electronics

Mexico . 2,253 parts In-Stock

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S.R.D Solutions

India . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 437 parts In-Stock

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Formix International (Excess)

India . 4 parts In-Stock

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Overview

Enhance your power supply designs with the MURS360BT3G diode by Onsemi. Manufactured to the highest quality standards, this diode offers unparalleled reliability and efficiency for high voltage ultra-fast recovery power applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 600V, this diode ensures optimal performance and protection for your circuits. Upgrade your projects with Onsemi's trusted technology and experience seamless operation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies installation and use of the diode in different electronic systems.

Surface Mount: YES

The surface mount capability allows for easy and convenient placement on circuit boards.

Maximum Reverse Recovery Time: 0.075 us

The ultra-fast recovery time ensures efficient operation and reduces power loss in high voltage applications.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate the diode into existing circuit designs.

No. of Terminals: 2

With two terminals, connecting the diode to a circuit is straightforward and hassle-free.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is ideal for compact electronic devices.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

This diode is designed for high voltage applications requiring fast recovery power, making it a reliable choice for demanding environments.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures the diode can function in a wide range of environmental conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

The dual terminal position offers versatility in mounting and connecting the diode in different orientations.

Maximum Time At Peak Reflow Temperature (s): 40

The short reflow time reduces the risk of thermal damage during soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for efficient soldering without affecting the diode's performance.

Diode Type: RECTIFIER DIODE

This rectifier diode is suitable for converting AC to DC current in power supply circuits.

Maximum Forward Voltage (VF): 1.05 V

The low forward voltage drop ensures minimal energy loss and efficient power conversion.

Maximum Output Current: 3 A

With a high output current capacity, this diode can handle demanding power requirements.

Terminal Form: C BEND

The C bend terminal form facilitates easy installation and secure connection in circuit boards.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high reverse voltage rating provides protection against voltage spikes and surges in the circuit.

Maximum Non Repetitive Peak Forward Current: 100 A

The high peak forward current capability allows the diode to handle sudden surges in current without damage.

Diode Element Material: SILICON

Silicon diode elements are robust and reliable, offering excellent performance and longevity in electronic circuits.

Technical Specifications

Diodes & Rectifiers MURS360BT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

MURS360BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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