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2SC2713-BL,LF

Toshiba

2SC2713-BL,LF by Toshiba

The Toshiba 2SC2713-BL,LF is a NPN BJT transistor with a VCEsat of 0.3V and hFE of 350. It is used in amplifier applications, featuring a max IC of 0.1A and fT of 100MHz. The package style is small outline with GULL WING terminals for surface mount assembly.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 20,525 parts In-Stock

1+ parts

$0.250

100+ parts

$0.096

1k+ parts

$0.062

10k+ parts

$0.037

20,525

$0.250

$0.096

$0.062

$0.037

DigiKey

USA . 11,760 parts In-Stock

1+ parts

$0.250

100+ parts

$0.095

1k+ parts

$0.062

10k+ parts

$0.042

11,760

$0.250

$0.095

$0.062

$0.042

Distributors (In-Stock)

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VNN

France . 609 parts In-Stock

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609

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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Ampacity Inc.

Singapore . 86,844 parts In-Stock

1+ parts

$0.204

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86,844

$0.204

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Component Stockers USA

USA . 214,189 parts In-Stock

1+ parts

$0.300

100+ parts

$0.090

1k+ parts

$0.060

10k+ parts

$0.030

214,189

$0.300

$0.090

$0.060

$0.030

QUARKTWIN TECHNOLOGY LTD

USA . 11,550 parts In-Stock

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11,550

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Aranea Global

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,775 parts In-Stock

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Argo Parts USA

USA . 788 parts In-Stock

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788

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Overview

Toshiba's 2SC2713-BL,LF is a top-quality Small Signal Bipolar Junction Transistor that guarantees high performance and reliability. Designed for applications like amplifiers, this NPN transistor offers customers exceptional value with its low VCEsat and high DC current gain. With a maximum collector-emitter voltage of 120V and a transition frequency of 100 MHz, this transistor is perfect for various electronic projects. Trust Toshiba for superior quality and unmatched advantages in the world of transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it reliable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification in electronic circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration into various electronic devices.

Maximum VCEsat: 0.3 V

Low VCEsat reduces power losses and improves overall efficiency of the transistor.

Surface Mount: YES

Enables easy and convenient placement on circuit boards, saving space and facilitating mass production.

Maximum Power Dissipation (Abs): 0.15 W

Efficient power dissipation capability ensures the transistor can handle high power loads without overheating.

Maximum Collector-Emitter Voltage: 120 V

High maximum VCE voltage rating allows for use in a wide range of applications requiring higher voltage handling.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency indicates fast response times and good high-frequency performance, suitable for amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2713-BL,LF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

350

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SC2713-BL,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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