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V62/12622-02YE

Texas Instruments

V62/12622-02YE by Texas Instruments

V62/12622-02YE microcontroller by Texas Instruments features a 32-bit CPU, 22-bit address bus, and 8-bit on-chip data RAM. Ideal for military applications with MIL temperature grade, it offers peripherals like CRC, DMA(16), TIMER(32), WDT and connectivity options such as CAN(3), LIN, SPI(3), UART(2).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,642 parts In-Stock

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4,642

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Digiode

USA . 2,766 parts In-Stock

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2,766

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Distributors (Availability)

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One Stop Electronics

USA . 1,618 parts In-Stock

1+ parts

$12.000

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1,618

$12.000

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AZTECH Wire

Italy . 277 parts In-Stock

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$14.518

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277

$14.518

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Parana Technologies

USA . 900 parts In-Stock

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$53.945

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900

$53.945

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IDEA Electronic Components Group

UK . 2,149 parts In-Stock

1+ parts

$60.612

100+ parts

$57.581

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$54.551

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2,149

$60.612

$57.581

$54.551

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ChromeModa Solutions

Germany . 2,094 parts In-Stock

1+ parts

$60.612

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$49.702

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2,094

$60.612

$49.702

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Corphita

USA . 1,617 parts In-Stock

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1,617

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DigiPath Technology Company

USA . 37 parts In-Stock

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$54.648

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37

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$54.648

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Overview

Unleash the power of cutting-edge technology with the V62/12622-02YE by Texas Instruments. As a leader in microcontrollers, Texas Instruments delivers unparalleled quality and reliability. Perfect for a wide range of applications, this microcontroller offers advanced features like ADC channels, DMA channels, and multiple peripherals. Experience seamless connectivity with CAN, LIN, SPI, and UART options. With low power mode and high-speed processing capabilities, the V62/12622-02YE provides exceptional value and performance for your next project. Elevate your designs to the next level with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable applications.

Surface Mount: YES

Surface mount capability simplifies the assembly process and offers space-saving advantages for compact designs.

Maximum Supply Voltage: 1.65 V

Efficient power consumption with a low maximum supply voltage, suitable for battery-operated devices.

CPU Family: CORTEX-R4F

The Cortex-R4F CPU family offers high performance and real-time response, making it suitable for applications requiring fast processing.

Maximum Clock Frequency: 20 MHz

The high clock frequency allows for speedy operation and quick data processing, essential for demanding tasks.

Technology: CMOS

Complementary metal-oxide-semiconductor (CMOS) technology ensures low power consumption and high noise immunity, making the product energy-efficient and reliable.

PWM Channels: YES

Pulse-width modulation (PWM) channels enable precise control over the output signal, ideal for applications requiring variable speed or voltage regulation.

Technical Specifications

Microcontrollers V62/12622-02YE attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

22

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-R4F

Maximum Clock Frequency:

20 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

NO

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e0

Length:

16 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

16

No. of External Interrupts:

0

No. of I/O Lines:

115

No. of Serial I/Os:

7

No. of Terminals:

337

No. of Timers:

32

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

220

RAM Bytes:

167772160

ROM Words:

2097152

ROM Programmability:

FLASH

Maximum Seated Height:

1.4 mm

Speed:

160 rpm

Maximum Supply Current:

580 mA

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.35 V

Nominal Supply Voltage:

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

20

Width:

16 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

CAN(3), LIN, SPI(3), UART(2)

Peripherals:

CRC, DMA(16), TIMER(32), WDT

Analog To Digital Convertors:

24-Ch 12-Bit (2)

Trade Compliance

V62/12622-02YE Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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