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V62/12622-01XE

Texas Instruments

V62/12622-01XE by Texas Instruments

V62/12622-01XE by Texas Instruments is a 32-bit microcontroller with 8-bit on-chip data RAM and 22-bit address bus width. It features MILITARY temperature grade, CAN(3), LIN, SPI(3), UART(2) connectivity, and low power mode for various applications requiring high-speed processing and multiple peripherals. With a max clock frequency of 20 MHz and ROM programmability, it is suitable for demanding tasks in military-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,827 parts In-Stock

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9,827

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Digiode

USA . 4,801 parts In-Stock

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4,801

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Distributors (Availability)

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One Stop Electronics

USA . 659 parts In-Stock

1+ parts

$11.000

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659

$11.000

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AZTECH Wire

Italy . 628 parts In-Stock

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$19.042

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628

$19.042

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Parana Technologies

USA . 304 parts In-Stock

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$74.127

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304

$74.127

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DigiPath Technology Company

USA . 1,986 parts In-Stock

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$81.623

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$75.093

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1,986

$81.623

$75.093

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ChromeModa Solutions

Germany . 3,654 parts In-Stock

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$83.289

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$68.297

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3,654

$83.289

$68.297

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IDEA Electronic Components Group

UK . 1,053 parts In-Stock

1+ parts

$83.289

100+ parts

$79.125

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$74.960

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1,053

$83.289

$79.125

$74.960

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Corphita

USA . 875 parts In-Stock

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875

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Overview

Discover the power and precision of the V62/12622-01XE by Texas Instruments, a cutting-edge microcontroller designed to revolutionize your electronic projects. Crafted with top-quality materials and boasting advanced features like extensive peripherals and low power mode, this device offers unparalleled performance and reliability. From industrial automation to consumer electronics, this versatile microcontroller is the perfect solution for a wide range of applications. Elevate your designs with the V62/12622-01XE and unlock endless possibilities in the world of technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for electronic components.

Maximum Supply Voltage: 1.65 V

Allows for a higher operating voltage range, providing flexibility in power supply options.

Bit Size: 32

High bit size allows for efficient processing and handling of data.

ROM Words: 2097152

Large ROM capacity for storing program instructions and data.

Maximum Clock Frequency: 20 MHz

High clock frequency enables fast and responsive operation.

Analog To Digital Convertors: 24-Ch 12-Bit (2)

Multiple high-resolution ADC channels for accurate analog-to-digital conversion.

Connectivity: CAN(3), LIN, SPI(3), UART(2)

Versatile connectivity options for interfacing with different communication protocols.

Speed: 140 rpm

Efficient processing speed for handling real-time tasks and applications.

Low Power Mode: YES

Energy-efficient design with low power mode for power conservation.

Technical Specifications

Microcontrollers V62/12622-01XE attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

22

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-R4F

Maximum Clock Frequency:

20 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

NO

JESD-30 Code:

S-PQFP-G144

JESD-609 Code:

e4

Length:

20 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

16

No. of External Interrupts:

0

No. of I/O Lines:

115

No. of Serial I/Os:

7

No. of Terminals:

144

No. of Timers:

32

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Bytes:

167772160

ROM Words:

2097152

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

140 rpm

Maximum Supply Current:

580 mA

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.35 V

Nominal Supply Voltage:

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

20 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

CAN(3), LIN, SPI(3), UART(2)

Peripherals:

CRC, DMA(16), TIMER(32), WDT

Analog To Digital Convertors:

24-Ch 12-Bit (2)

Trade Compliance

V62/12622-01XE Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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