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TPS1101PWLE

Texas Instruments

TPS1101PWLE by Texas Instruments

TPS1101PWLE by Texas Instruments is a P-CHANNEL FET with 15V DS Breakdown Voltage and 2.18A Drain Current. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a 0.19 ohm On Resistance and operating up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,032 parts In-Stock

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3,032

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Digiode

USA . 1,991 parts In-Stock

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1,991

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Distributors (Availability)

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Parana Technologies

USA . 2,002 parts In-Stock

1+ parts

$1.767

100+ parts

-

1k+ parts

$2.336

10k+ parts

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2,002

$1.767

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$2.336

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DigiPath Technology Company

USA . 1,979 parts In-Stock

1+ parts

$1.945

100+ parts

$1.790

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-

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1,979

$1.945

$1.790

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ChromeModa Solutions

Germany . 6,007 parts In-Stock

1+ parts

$1.985

100+ parts

$1.628

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6,007

$1.985

$1.628

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IDEA Electronic Components Group

UK . 1,330 parts In-Stock

1+ parts

$1.985

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$1.786

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1,330

$1.985

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$1.786

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AZTECH Wire

Italy . 863 parts In-Stock

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$12.353

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863

$12.353

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One Stop Electronics

USA . 1,286 parts In-Stock

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$24.050

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1,286

$24.050

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Semicontronic

India . 1,075 parts In-Stock

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$27.050

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$26.374

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$26.238

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1,075

$27.050

$26.374

$26.238

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Ampacity Inc.

Singapore . 372 parts In-Stock

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$47.050

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372

$47.050

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Corphita

USA . 1,097 parts In-Stock

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1,097

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Kepictronics

USA . 1,000 parts In-Stock

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Corohmni

South Africa . 61 parts In-Stock

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Overview

Discover the power of the TPS1101PWLE by Texas Instruments, a top-notch P-Channel Field Effect Transistor perfect for switching applications. With a sturdy plastic/epoxy body and a convenient single configuration with built-in diode, this transistor offers reliability and efficiency like no other. Ideal for enhancing your electronic projects, this transistor boasts a 15V minimum DS breakdown voltage and a maximum drain current of 2.18A, making it a powerhouse in small signal FET technology. Trust Texas Instruments for quality and innovation, and elevate your designs with the TPS1101PWLE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for portable and long-lasting applications.

Polarity or Channel Type: P-CHANNEL

The P-channel type allows for efficient control of the flow of current, enabling the transistor to be used in switching applications effectively.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor against reverse voltage, enhancing its reliability.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can rapidly switch between on and off states, making it ideal for use in digital circuits and power supplies.

Surface Mount: YES

Being surface mountable makes installation and soldering of the transistor more convenient, especially in compact electronic devices.

Minimum DS Breakdown Voltage: 15 V

With a minimum breakdown voltage of 15V, this transistor can withstand higher voltages, ensuring reliable performance in various circuit conditions.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on circuit boards, optimizing space utilization and ease of assembly.

Terminal Form: GULL WING

The gull wing terminal form facilitates a secure connection and easy soldering onto the circuit board, enhancing the overall reliability of the transistor.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for precise control of the transistor's conductivity, making it suitable for a wide range of circuit applications.

Maximum Drain Current (Abs): 2.18 A

With a high maximum drain current, this transistor can handle significant power loads, making it suitable for applications requiring high current capabilities.

No. of Terminals: 16

The 16 terminals offer versatile connection options, allowing for flexibility in circuit design and integration in complex electronic systems.

Maximum Power Dissipation (Abs): 0.71 W

The maximum power dissipation of 0.71W ensures that the transistor can effectively dissipate heat generated during operation, preventing overheating and ensuring reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the footprint of the transistor, making it suitable for space-constrained applications without compromising on performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology enhances the transistor's performance, providing high efficiency and reliability in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperatures, making it suitable for use in demanding environments.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, stability, and durability, making it a reliable choice for various electronic applications.

Maximum Drain-Source On Resistance: 0.19 ohm

The low drain-source on resistance of 0.19 ohms minimizes power losses and improves efficiency, making this transistor suitable for high-frequency switching applications.

Terminal Position: DUAL

Having a dual terminal position offers flexibility in circuit design and allows for easy connection to external components, enhancing the versatility of the transistor.

Case Connection: ISOLATED

The isolated case connection provides electrical insulation and protection, reducing the risk of short circuits and improving the overall reliability of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPS1101PWLE attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (Abs) (ID):

2.18 A

Maximum Drain Current (ID):

2.18 A

Maximum Drain-Source On Resistance:

.19 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G16

No. of Elements:

1

No. of Terminals:

16

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPS1101PWLE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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