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TPS1100PWLE

Texas Instruments

TPS1100PWLE by Texas Instruments

TPS1100PWLE by Texas Instruments is a P-CHANNEL FET with 15V DS Breakdown Voltage and 1.27A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has GULL WING terminals and can handle up to 0.504W power dissipation at 150°C max temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,889 parts In-Stock

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4,889

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Digiode

USA . 1,479 parts In-Stock

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1,479

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Distributors (Availability)

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Parana Technologies

USA . 280 parts In-Stock

1+ parts

$0.344

100+ parts

-

1k+ parts

$1.564

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280

$0.344

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$1.564

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DigiPath Technology Company

USA . 353 parts In-Stock

1+ parts

$0.379

100+ parts

$0.349

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-

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353

$0.379

$0.349

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ChromeModa Solutions

Germany . 6,894 parts In-Stock

1+ parts

$0.387

100+ parts

$0.317

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6,894

$0.387

$0.317

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IDEA Electronic Components Group

UK . 1,602 parts In-Stock

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$0.387

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$0.348

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1,602

$0.387

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$0.348

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AZTECH Wire

Italy . 819 parts In-Stock

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$7.131

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819

$7.131

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Semicontronic

India . 315 parts In-Stock

1+ parts

$21.050

100+ parts

$20.524

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$20.418

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315

$21.050

$20.524

$20.418

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Ampacity Inc.

Singapore . 447 parts In-Stock

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$46.050

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447

$46.050

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One Stop Electronics

USA . 867 parts In-Stock

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$49.050

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867

$49.050

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Corphita

USA . 4,632 parts In-Stock

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Corohmni

South Africa . 433 parts In-Stock

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Overview

Experience superior performance and reliability with the TPS1100PWLE by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality small signal field effect transistors that are perfect for switching applications. With a built-in diode and enhancement mode operation, this P-channel transistor offers ease of use and efficiency. The TPS1100PWLE's high power dissipation and low drain-source on resistance ensure optimal functionality, making it a valuable choice for your electronic projects. Trust Texas Instruments for cutting-edge technology and unparalleled performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to external elements, making the product long-lasting.

Polarity or Channel Type: P-CHANNEL

P-Channel type allows for efficient switching and control of current flow.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and saves space by eliminating the need for an additional component.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto PCBs.

Minimum DS Breakdown Voltage: 15 V

With a minimum breakdown voltage of 15V, this transistor can handle higher voltages without failing.

Package Shape: RECTANGULAR

Rectangular package shape provides ease of handling and mounting on PCBs.

Terminal Form: GULL WING

Gull Wing terminal form ensures secure connection and ease of soldering.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control and modulation of current flow.

Maximum Drain Current (Abs) (ID): 1.27 A

High maximum drain current rating of 1.27A allows for handling of larger loads.

No. of Terminals: 8

Having 8 terminals provides flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.504 W

High maximum power dissipation rating of 0.504W ensures the transistor can handle heat dissipation effectively.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers efficient performance and reliability in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable operation even in demanding environments.

Transistor Element Material: SILICON

Silicon material for the transistor element provides excellent electrical properties and reliability.

Maximum Drain-Source On Resistance: 0.4 ohm

Low drain-source on resistance of 0.4 ohm ensures efficient current flow and minimal power loss.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPS1100PWLE attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (Abs) (ID):

1.27 A

Maximum Drain Current (ID):

1.27 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPS1100PWLE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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