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TPS1101PW

Texas Instruments

TPS1101PW by Texas Instruments

TPS1101PW by Texas Instruments is a P-CHANNEL FET with 15V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.18A and 0.19ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,196 parts In-Stock

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9,196

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Digiode

USA . 1,782 parts In-Stock

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1,782

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Distributors (Availability)

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Parana Technologies

USA . 1,975 parts In-Stock

1+ parts

$0.684

100+ parts

-

1k+ parts

$1.727

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1,975

$0.684

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$1.727

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DigiPath Technology Company

USA . 787 parts In-Stock

1+ parts

$0.753

100+ parts

$0.692

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787

$0.753

$0.692

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ChromeModa Solutions

Germany . 4,031 parts In-Stock

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$0.768

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$0.630

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4,031

$0.768

$0.630

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IDEA Electronic Components Group

UK . 1,799 parts In-Stock

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$0.768

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$0.691

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1,799

$0.768

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$0.691

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Semicontronic

India . 692 parts In-Stock

1+ parts

$1.050

100+ parts

$1.024

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$1.018

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692

$1.050

$1.024

$1.018

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One Stop Electronics

USA . 129 parts In-Stock

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$9.050

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129

$9.050

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AZTECH Wire

Italy . 751 parts In-Stock

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$9.239

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751

$9.239

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Ampacity Inc.

Singapore . 1,165 parts In-Stock

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$63.050

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1,165

$63.050

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Corphita

USA . 522 parts In-Stock

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522

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Corohmni

South Africa . 359 parts In-Stock

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Overview

Upgrade your electronics with the TPS1101PW by Texas Instruments, a high-quality P-Channel Field Effect Transistor designed for switching applications. With a built-in diode and a maximum drain current of 2.18 A, this transistor offers superior performance and reliability. Perfect for a wide range of electronic devices, this enhancement mode transistor is surface mountable and operates at temperatures up to 150°C. Trust in Texas Instruments for top-notch components that deliver exceptional value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistors, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high input impedance, low output impedance, and low voltage drive requirements.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps to protect the transistor from reverse voltage and can simplify circuit design.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, making it suitable for a wide range of electronic devices.

Surface Mount: YES

Being surface mountable, these transistors are easy to install on circuit boards, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 15 V

The high breakdown voltage ensures reliable performance and protection against voltage spikes.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into modern circuit board designs.

Terminal Form: GULL WING

The gull-wing terminals are ideal for surface mounting and provide mechanical strength to the connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easily turned on and off, making them suitable for switching applications.

No. of Terminals: 16

The 16 terminals provide multiple connection options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and allows for denser packing of components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and reliable operation.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand harsh environmental conditions.

Transistor Element Material: SILICON

Silicon transistors are known for their high thermal conductivity and reliability in electronic circuits.

Maximum Drain Current (ID): 2.18 A

The high drain current rating allows for handling higher loads in the circuit without overheating.

Maximum Drain-Source On Resistance: 0.19 ohm

The low on-resistance ensures minimal power loss and efficient operation of the transistor.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for easy connection to external components.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPS1101PW attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ESD PROTECTED

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (ID):

2.18 A

Maximum Drain-Source On Resistance:

.19 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G16

No. of Elements:

1

No. of Terminals:

16

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPS1101PW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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