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TPS1101PWR

Texas Instruments

TPS1101PWR by Texas Instruments

TPS1101PWR by Texas Instruments is a P-CHANNEL FET for switching applications. It has a 15V DS breakdown voltage, 2.18A max drain current, and 0.19 ohm max on resistance. With a small outline package style and operating temperature range of -40 to 150 °C, it's ideal for enhancement mode operation in various electronic devices.

Median Price

$1.550

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$1.490

1k+ parts

$1.240

10k+ parts

$1.100

3,000

-

$1.490

$1.240

$1.100

DigiKey

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.860

10k+ parts

-

3,000

-

-

$1.860

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.550

10k+ parts

-

2,000

-

-

$1.550

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,136 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

-

10k+ parts

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3,136

$1.000

-

-

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Digiode

USA . 2,203 parts In-Stock

1+ parts

$1.054

100+ parts

-

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-

10k+ parts

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2,203

$1.054

-

-

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DigiKey Marketplace

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$1.000

1k+ parts

-

10k+ parts

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3,000

-

$1.000

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,564 parts In-Stock

1+ parts

$0.767

100+ parts

-

1k+ parts

$1.764

10k+ parts

-

1,564

$0.767

-

$1.764

-

DigiPath Technology Company

USA . 1,674 parts In-Stock

1+ parts

$0.845

100+ parts

$0.777

1k+ parts

-

10k+ parts

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1,674

$0.845

$0.777

-

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IDEA Electronic Components Group

UK . 2,276 parts In-Stock

1+ parts

$0.862

100+ parts

-

1k+ parts

$0.776

10k+ parts

-

2,276

$0.862

-

$0.776

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ChromeModa Solutions

Germany . 1,076 parts In-Stock

1+ parts

$0.862

100+ parts

$0.707

1k+ parts

-

10k+ parts

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1,076

$0.862

$0.707

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Corphita

USA . 4,695 parts In-Stock

1+ parts

$0.999

100+ parts

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10k+ parts

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4,695

$0.999

-

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Component Stockers USA

USA . 3,961 parts In-Stock

1+ parts

$1.000

100+ parts

$0.940

1k+ parts

$0.850

10k+ parts

-

3,961

$1.000

$0.940

$0.850

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Perfect Parts

USA . 5,159 parts In-Stock

1+ parts

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5,159

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Overview

Upgrade your electronic devices with the TPS1101PWR by Texas Instruments, a top-of-the-line P-Channel FET perfect for switching applications. With a high DS Breakdown Voltage of 15V and a low Drain-Source On Resistance of 0.19 ohm, this transistor offers exceptional performance and reliability. Its small outline package and gull wing terminals make it easy to integrate into your designs. Trust in Texas Instruments' reputation for quality and innovation, and experience the superior functionality and efficiency that the TPS1101PWR brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower leakage current compared to N-channel transistors, making them more efficient for certain applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for protection against reverse polarity connections, enhancing the reliability of the overall circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and space in the design.

Minimum DS Breakdown Voltage: 15 V

A higher breakdown voltage provides better protection against voltage spikes and ensures reliable operation in varying conditions.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and secure on the PCB, simplifying the overall design process.

Terminal Form: GULL WING

Gull wing terminals are easy to solder and provide a secure connection, ensuring good electrical contact for optimal performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and offer faster switching speeds, making them ideal for high-frequency applications.

Maximum Drain Current (Abs) (ID): 2.18 A

With a high drain current capacity, this transistor can handle substantial current loads, making it suitable for a variety of applications.

No. of Terminals: 16

Having 16 terminals provides flexibility in circuit design and allows for connections to multiple external components.

Maximum Power Dissipation (Abs): 0.71 W

With a high power dissipation capability, this transistor can handle heat effectively, ensuring stable operation even under heavy loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency, low power consumption, and fast switching speeds, making it a preferred choice for many applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Transistor Element Material: SILICON

Silicon transistors offer good thermal stability, high breakdown voltage, and low leakage current, making them a reliable choice for a wide range of applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this transistor can function reliably in cold environments, making it suitable for various applications.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides good conductivity, corrosion resistance, and solderability, ensuring excellent electrical performance and long-term reliability.

Maximum Drain-Source On Resistance: 0.19 ohm

A low drain-source on resistance results in minimal power loss and efficient operation, making this transistor suitable for high-performance applications.

Terminal Position: DUAL

Having dual terminal positions allows for versatile mounting and connection options, enhancing the flexibility of the transistor in different circuit layouts.

Case Connection: ISOLATED

An isolated case connection ensures proper electrical insulation and reduces the risk of short circuits, enhancing the overall safety and reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, making it suitable for automated assembly processes and reflow soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260°C ensures reliable soldering and assembly, making this transistor suitable for lead-free soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPS1101PWR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (Abs) (ID):

2.18 A

Maximum Drain Current (ID):

2.18 A

Maximum Drain-Source On Resistance:

.19 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

16

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.71 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPS1101PWR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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