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TPS1100PWRG4

Texas Instruments

TPS1100PWRG4 by Texas Instruments

TPS1100PWRG4 by Texas Instruments is a P-CHANNEL FET for switching applications. It features a 15V DS breakdown voltage, 1.27A max drain current, and 0.4 ohm max on resistance. With a small outline package style and operating temperature up to 150°C, it's ideal for compact electronic devices requiring efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,861 parts In-Stock

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4,861

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Digiode

USA . 2,453 parts In-Stock

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2,453

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Distributors (Availability)

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Parana Technologies

USA . 556 parts In-Stock

1+ parts

$1.488

100+ parts

-

1k+ parts

$2.162

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556

$1.488

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$2.162

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$1.493

100+ parts

$1.359

1k+ parts

$1.224

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-

150

$1.493

$1.359

$1.224

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DigiPath Technology Company

USA . 11 parts In-Stock

1+ parts

$1.639

100+ parts

$1.507

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-

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11

$1.639

$1.507

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ChromeModa Solutions

Germany . 4,172 parts In-Stock

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$1.672

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$1.371

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4,172

$1.672

$1.371

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IDEA Electronic Components Group

UK . 724 parts In-Stock

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$1.672

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$1.505

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724

$1.672

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$1.505

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AZTECH Wire

Italy . 693 parts In-Stock

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$7.729

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693

$7.729

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One Stop Electronics

USA . 1,182 parts In-Stock

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$10.050

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$10.050

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Semicontronic

India . 748 parts In-Stock

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$41.050

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$40.024

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$39.818

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748

$41.050

$40.024

$39.818

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Ampacity Inc.

Singapore . 1,491 parts In-Stock

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$59.050

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1,491

$59.050

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Corphita

USA . 667 parts In-Stock

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Corohmni

South Africa . 384 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Texas Instruments with the TPS1100PWRG4 Small Signal Field Effect Transistor. This P-CHANNEL transistor offers a multitude of applications in switching, all while providing enhanced performance and efficiency. With a maximum drain current of 1.27 A and a minimum DS breakdown voltage of 15 V, this transistor is designed to meet your power needs with ease. Trust in Texas Instruments for top-of-the-line technology and innovation that delivers value and benefits to customers in various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: P-CHANNEL

Suitable for various applications where P-channel transistors are required.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient integration of a diode simplifies circuit design and saves space.

Transistor Application: SWITCHING

Designed for efficient switching applications, making it versatile for different circuit requirements.

Surface Mount: YES

Allows for easy and convenient assembly on PCBs, saving time and labor.

Minimum DS Breakdown Voltage: 15 V

Provides a sufficient safety margin for voltage spikes and ensures reliable operation within the specified voltage range.

Maximum Drain Current (Abs) (ID): 1.27 A

Capable of handling high current loads, suitable for various applications.

Maximum Power Dissipation (Abs): 0.504 W

Efficient power handling capabilities ensure stable operation under high power conditions.

Maximum Operating Temperature: 150 °C

Can operate in a wide temperature range, suitable for diverse environmental conditions.

Maximum Drain-Source On Resistance: 0.4 ohm

Low on-resistance minimizes power loss and improves overall efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPS1100PWRG4 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (Abs) (ID):

1.27 A

Maximum Drain Current (ID):

1.27 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPS1100PWRG4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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