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TPS1101Y

Texas Instruments

TPS1101Y by Texas Instruments

TPS1101Y by Texas Instruments is a P-CHANNEL FET for switching applications. It features a 15V DS breakdown voltage, operates in enhancement mode, and has a max temperature of 150°C. This single transistor with built-in diode is surface mountable and comes in an 8-terminal rectangular package suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,736 parts In-Stock

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Digiode

USA . 531 parts In-Stock

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531

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Parana Technologies

USA . 1,076 parts In-Stock

1+ parts

$0.454

100+ parts

-

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$1.608

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1,076

$0.454

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$1.608

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DigiPath Technology Company

USA . 771 parts In-Stock

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$0.500

100+ parts

$0.460

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771

$0.500

$0.460

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ChromeModa Solutions

Germany . 1,279 parts In-Stock

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$0.510

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$0.418

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1,279

$0.510

$0.418

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IDEA Electronic Components Group

UK . 1,012 parts In-Stock

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$0.510

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$0.459

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1,012

$0.510

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$0.459

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AZTECH Wire

Italy . 800 parts In-Stock

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$19.427

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800

$19.427

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Semicontronic

India . 1,368 parts In-Stock

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$30.050

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$29.299

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$29.148

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1,368

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One Stop Electronics

USA . 1,127 parts In-Stock

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$47.050

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Ampacity Inc.

Singapore . 523 parts In-Stock

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$56.050

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523

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Corphita

USA . 463 parts In-Stock

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Corohmni

South Africa . 461 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the TPS1101Y by Texas Instruments. Designed with precision and reliability in mind, this P-CHANNEL Small Signal Field Effect Transistor offers seamless switching capabilities for a wide range of applications. With its built-in diode and high DS Breakdown Voltage of 15V, this transistor ensures efficient operation even in challenging conditions. Trust in Texas Instruments' expertise in semiconductor technology to deliver superior quality and performance. Upgrade your electronics with the TPS1101Y and experience enhanced functionality and durability like never before.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-Channel FETs have lower conduction losses and higher input impedance compared to N-Channel FETs, making them suitable for certain applications requiring low power consumption.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode can provide reverse polarity protection and allow for more efficient switching performance in certain circuit configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient power control.

Surface Mount: YES

Surface mount technology allows for easy integration into PCB designs and reduces overall space requirements, making it ideal for compact electronic devices.

Minimum DS Breakdown Voltage: 15 V

The high breakdown voltage allows for safe operation in circuits with higher voltages, ensuring reliability and longevity of the product.

Package Shape: RECTANGULAR

The rectangular shape provides a more uniform and compact design, making it easier to mount and integrate into a circuit layout.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs require only a small signal to control the device, enabling precise power management and high efficiency in operation.

No. of Terminals: 8

The higher number of terminals allows for more versatile connectivity options and greater flexibility in circuit design.

Package Style (Meter): UNCASED CHIP

The unencased chip design provides a compact and lightweight package, ideal for space-constrained applications and enabling efficient heat dissipation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds, low gate drive power, and improved thermal performance, making it suitable for high-performance applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the FET can withstand harsh environmental conditions and ensure stable performance in various applications.

Transistor Element Material: SILICON

Silicon-based FETs offer high reliability, low leakage current, and good thermal stability, making them a preferred choice for many electronic applications.

Terminal Position: UPPER

The upper terminal position simplifies the device's connection to other components and ensures easy access during installation and maintenance procedures.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and enhances the overall reliability and safety of the circuit design.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPS1101Y attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

15 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XUUC-N8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPS1101Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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