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TMS320DM8127BCYED1

Texas Instruments

TMS320DM8127BCYED1 by Texas Instruments

TMS320DM8127BCYED1 by Texas Instruments is a 32-bit microprocessor with integrated cache, 16-bit external data bus width, and max clock frequency of 30 MHz. Ideal for industrial applications requiring low power mode, it features a temperature range from -40 to 90 °C and terminal pitch of 0.8 mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,272 parts In-Stock

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Digiode

USA . 962 parts In-Stock

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AZTECH Wire

Italy . 807 parts In-Stock

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$10.943

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One Stop Electronics

USA . 1,371 parts In-Stock

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$14.000

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Parana Technologies

USA . 926 parts In-Stock

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$49.359

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DigiPath Technology Company

USA . 506 parts In-Stock

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$54.350

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$50.002

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ChromeModa Solutions

Germany . 3,868 parts In-Stock

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$55.459

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$45.476

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IDEA Electronic Components Group

UK . 822 parts In-Stock

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$55.459

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$52.686

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$49.913

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822

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Component Stockers USA

USA . 409 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 29,325 parts In-Stock

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Corphita

USA . 1,564 parts In-Stock

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Microchip USA

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Overview

Unlock the power of cutting-edge technology with the TMS320DM8127BCYED1 by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-quality microprocessors that provide seamless performance and reliability. Ideal for a wide range of applications, this microprocessor offers unmatched value and benefits to customers seeking high-speed processing, integrated cache, and low power consumption. Trust Texas Instruments to deliver innovation at its best with the TMS320DM8127BCYED1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Integrated Cache: YES

Having an integrated cache improves the performance of the microprocessor by allowing for faster access to frequently used data.

Maximum Supply Voltage: 1.26 V

The higher maximum supply voltage provides flexibility in power requirements and allows for efficient performance.

Address Bus Width: 28

A wider address bus allows for faster data transmission and processing, enhancing the overall speed and efficiency of the microprocessor.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures ensures that the microprocessor can function reliably in various environments, including extreme cold conditions.

Maximum Clock Frequency: 30 MHz

With a high maximum clock frequency, this microprocessor can handle complex tasks and processes quickly and efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microprocessor energy-efficient and reliable.

Technical Specifications

Microprocessors TMS320DM8127BCYED1 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

28

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

30 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B684

JESD-609 Code:

e1

Length:

23 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

684

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Maximum Seated Height:

3.06 mm

Speed:

720 rpm

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

TMS320DM8127BCYED1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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