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SN74V283-7PZA

Texas Instruments

SN74V283-7PZA by Texas Instruments

SN74V283-7PZA by Texas Instruments is a FIFO memory with 32KX18 organization, operating at 133 MHz with a cycle time of 7.5 ns. It features a low profile flatpack package and is suitable for applications requiring fast synchronous data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,344 parts In-Stock

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4,344

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Digiode

USA . 3,531 parts In-Stock

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3,531

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Parana Technologies

USA . 2,171 parts In-Stock

1+ parts

$2.443

100+ parts

-

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$2.938

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2,171

$2.443

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$2.938

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DigiPath Technology Company

USA . 947 parts In-Stock

1+ parts

$2.690

100+ parts

$2.475

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947

$2.690

$2.475

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ChromeModa Solutions

Germany . 4,709 parts In-Stock

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$2.745

100+ parts

$2.251

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4,709

$2.745

$2.251

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IDEA Electronic Components Group

UK . 1,678 parts In-Stock

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$2.745

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$2.470

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1,678

$2.745

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$2.470

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One Stop Electronics

USA . 841 parts In-Stock

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$5.000

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841

$5.000

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AZTECH Wire

Italy . 495 parts In-Stock

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$14.641

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495

$14.641

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QUARKTWIN TECHNOLOGY LTD

USA . 5,742 parts In-Stock

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Corphita

USA . 671 parts In-Stock

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671

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Microchip USA

USA . 348 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the Texas Instruments SN74V283-7PZA FIFO memory IC. Boasting cutting-edge technology and a commitment to excellence, Texas Instruments delivers a top-tier product that exceeds industry standards. Ideal for a wide range of applications, this FIFO memory IC offers unmatched speed, efficiency, and accuracy for your projects. Trust in Texas Instruments for superior quality and innovation that will elevate your work to the next level. Choose the SN74V283-7PZA for unbeatable value and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and rugged applications.

Cycle Time: 7.5 ns

The fast cycle time of 7.5 ns ensures quick data transfer and efficient operation of the FIFO.

Operating Mode: SYNCHRONOUS

The synchronous operation mode helps in maintaining timing accuracy and synchronization with other components in the system.

Maximum Clock Frequency (fCLK): 133 MHz

The high maximum clock frequency of 133 MHz allows for high-speed data processing and overall improved performance.

Memory Density: 589824 bit

With a high memory density of 589824 bits, the FIFO can store a large amount of data, making it suitable for demanding applications.

Output Enable: YES

The presence of output enable feature provides control over the data output, allowing for efficient data flow management.

Technical Specifications

FIFO SN74V283-7PZA attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

5 ns

Additional Features:

CAN ALSO BE CONFIGURED AS 65536 X 9

Alternate Memory Width:

9

Maximum Clock Frequency (fCLK):

133 MHz

Cycle Time:

7.5 ns

JESD-30 Code:

S-PQFP-G80

JESD-609 Code:

e4

Length:

14 mm

Memory Density:

589824 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

4

No. of Functions:

1

No. of Terminals:

80

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP80,.64SQ

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.015 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

SN74V283-7PZA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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