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SN74ACT7806-20DLR

Texas Instruments

SN74ACT7806-20DLR by Texas Instruments

SN74ACT7806-20DLR by Texas Instruments is a FIFO with 256x18 organization, operating at 20ns cycle time and up to 50MHz clock frequency. It is used in applications requiring fast synchronous data transfer, featuring a small outline package with 56 terminals for surface mount installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,658 parts In-Stock

1+ parts

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4,658

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Digiode

USA . 1,656 parts In-Stock

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1,656

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,267 parts In-Stock

1+ parts

$5.267

100+ parts

-

1k+ parts

$5.891

10k+ parts

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1,267

$5.267

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$5.891

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DigiPath Technology Company

USA . 1,309 parts In-Stock

1+ parts

$5.800

100+ parts

$5.336

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1,309

$5.800

$5.336

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IDEA Electronic Components Group

UK . 2,231 parts In-Stock

1+ parts

$5.918

100+ parts

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$5.326

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2,231

$5.918

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$5.326

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ChromeModa Solutions

Germany . 475 parts In-Stock

1+ parts

$5.918

100+ parts

$4.853

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475

$5.918

$4.853

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AZTECH Wire

Italy . 631 parts In-Stock

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$19.011

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631

$19.011

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One Stop Electronics

USA . 1,131 parts In-Stock

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$25.000

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1,131

$25.000

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Corphita

USA . 4,952 parts In-Stock

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4,952

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Microchip USA

USA . 403 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Texas Instruments with the SN74ACT7806-20DLR FIFO memory IC. This highly versatile component is perfect for a wide range of applications, offering fast cycle times and synchronous operation for seamless performance. With a compact design and 3-state output characteristics, this FIFO memory IC provides excellent value and benefits to customers looking for high-speed data storage solutions. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs with the SN74ACT7806-20DLR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and lightweight, suitable for various applications.

Cycle Time: 20 ns

The fast cycle time of 20 ns ensures quick data processing and retrieval, making the product efficient for high-speed operations.

Operating Mode: SYNCHRONOUS

The synchronous operating mode helps in keeping data transmissions synchronized, reducing errors and improving overall system performance.

Maximum Clock Frequency (fCLK): 50 MHz

With a high maximum clock frequency of 50 MHz, the product can handle data at a rapid pace, making it ideal for demanding applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Memory Density: 4608 bit

The high memory density of 4608 bit allows for storing a large amount of data in a compact space, making the product suitable for storage-intensive tasks.

Output Enable: YES

The output enable feature provides flexibility in controlling data output, allowing for seamless integration with different systems or devices.

Maximum Access Time: 15 ns

The low maximum access time of 15 ns ensures quick access to stored data, contributing to the overall efficiency of the product.

Technical Specifications

FIFO SN74ACT7806-20DLR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

R-PDSO-G56

Length:

18.415 mm

Memory Density:

4608 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

56

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP56,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

SN74ACT7806-20DLR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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