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SN74ACT7802-40FN

Texas Instruments

SN74ACT7802-40FN by Texas Instruments

SN74ACT7802-40FN by Texas Instruments is a FIFO chip with 1Kx18 organization, 40ns cycle time, and 25MHz clock frequency. It operates synchronously at 5V and has a memory density of 18432 bits. Ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,039 parts In-Stock

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Digiode

USA . 1,649 parts In-Stock

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1,649

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Distributors (Availability)

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Parana Technologies

USA . 340 parts In-Stock

1+ parts

$1.913

100+ parts

-

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$2.449

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340

$1.913

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$2.449

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DigiPath Technology Company

USA . 1,576 parts In-Stock

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$2.106

100+ parts

$1.938

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1,576

$2.106

$1.938

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ChromeModa Solutions

Germany . 3,824 parts In-Stock

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$2.149

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$1.762

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3,824

$2.149

$1.762

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IDEA Electronic Components Group

UK . 2,264 parts In-Stock

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$2.149

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$1.934

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2,264

$2.149

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$1.934

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AZTECH Wire

Italy . 720 parts In-Stock

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$5.919

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720

$5.919

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One Stop Electronics

USA . 380 parts In-Stock

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$29.000

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380

$29.000

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Corphita

USA . 1,285 parts In-Stock

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Microchip USA

USA . 410 parts In-Stock

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Assy Fe

Spain . 36 parts In-Stock

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Overview

Looking for a reliable FIFO solution? Look no further than the SN74ACT7802-40FN by Texas Instruments. Known for their exceptional quality and innovation, Texas Instruments delivers top-notch products that exceed industry standards. With a cycle time of 40 ns and operating mode of synchronous, this chip carrier package offers unmatched performance in a variety of applications. Get your hands on the SN74ACT7802-40FN today and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection for the internal components of the FIFO, ensuring long-term reliability.

Cycle Time: 40 ns

With a fast cycle time of 40 ns, this FIFO can efficiently handle data transfers at high speeds, making it suitable for applications requiring quick and responsive data processing.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V, this FIFO is compatible with standard voltage levels and can easily integrate into existing systems without the need for additional power conversion.

Maximum Clock Frequency (fCLK): 25 MHz

With a maximum clock frequency of 25 MHz, this FIFO can support high-speed data transfers and communication protocols, making it suitable for demanding real-time applications.

Memory Density: 18432 bit

With a memory density of 18432 bits, this FIFO can store a large amount of data, making it ideal for applications with high data throughput and storage requirements.

Technical Specifications

FIFO SN74ACT7802-40FN attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Maximum Clock Frequency (fCLK):

25 MHz

Cycle Time:

40 ns

JESD-30 Code:

S-PQCC-J68

JESD-609 Code:

e4

Length:

24.23 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

68

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC68,1.0SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

24.23 mm

Trade Compliance

SN74ACT7802-40FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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