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SN74ACT7205L-25DVR

Texas Instruments

SN74ACT7205L-25DVR by Texas Instruments

SN74ACT7205L-25DVR by Texas Instruments is a FIFO with 8Kx9 organization, 35ns cycle time, and 25ns access time. It operates asynchronously at a supply voltage of 4.5V to 5.5V, making it ideal for high-speed parallel data storage applications in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,334 parts In-Stock

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8,334

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Digiode

USA . 2,762 parts In-Stock

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2,762

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 514 parts In-Stock

1+ parts

$2.795

100+ parts

$259.604

1k+ parts

$2.516

10k+ parts

-

514

$2.795

$259.604

$2.516

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DigiPath Technology Company

USA . 819 parts In-Stock

1+ parts

$3.078

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819

$3.078

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ChromeModa Solutions

Germany . 5,420 parts In-Stock

1+ parts

$3.141

100+ parts

$2.576

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5,420

$3.141

$2.576

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IDEA Electronic Components Group

UK . 458 parts In-Stock

1+ parts

$3.141

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$2.827

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458

$3.141

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$2.827

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AZTECH Wire

Italy . 394 parts In-Stock

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$8.038

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394

$8.038

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One Stop Electronics

USA . 255 parts In-Stock

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$22.000

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255

$22.000

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Corphita

USA . 1,993 parts In-Stock

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Overview

Unlock seamless data transfer and storage with the SN74ACT7205L-25DVR FIFO by Texas Instruments. Crafted with precision and expertise, this FIFO device offers unparalleled reliability and performance for a wide range of applications. From telecommunications to industrial automation, this high-quality product ensures smooth operation and efficient data handling. Experience the value and benefits of this advanced technology, providing customers with a competitive edge in their projects. Trust Texas Instruments for top-of-the-line solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Cycle Time: 35 ns

Fast operation speed allows for quick data retrieval and transfer within the FIFO.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage ensures consistent and reliable performance of the FIFO.

No. of Words: 8192 words

Large storage capacity allows for storing a significant amount of data in the FIFO.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency of the FIFO.

Maximum Access Time: 25 ns

Quick access time ensures fast retrieval of data when needed, improving overall system performance.

Technical Specifications

FIFO SN74ACT7205L-25DVR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Cycle Time:

35 ns

JESD-30 Code:

R-PDSO-G28

Length:

18.365 mm

Memory Density:

73728 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

8.765 mm

Trade Compliance

SN74ACT7205L-25DVR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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