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SN74ACT3642-15PQ

Texas Instruments

SN74ACT3642-15PQ by Texas Instruments

SN74ACT3642-15PQ by Texas Instruments is a 1Kx36 CMOS FIFO memory with 15ns cycle time, operating at 5V. It features a max clock frequency of 66.7MHz and offers bi-directional parallel data transfer. This device is ideal for applications requiring fast synchronous data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,344 parts In-Stock

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Digiode

USA . 1,067 parts In-Stock

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1,067

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Distributors (Availability)

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Parana Technologies

USA . 1,203 parts In-Stock

1+ parts

$2.042

100+ parts

-

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$2.565

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1,203

$2.042

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$2.565

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ChromeModa Solutions

Germany . 6,619 parts In-Stock

1+ parts

$2.294

100+ parts

$1.881

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6,619

$2.294

$1.881

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IDEA Electronic Components Group

UK . 615 parts In-Stock

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$2.294

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$2.065

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615

$2.294

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$2.065

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One Stop Electronics

USA . 1,166 parts In-Stock

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$17.000

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$17.000

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AZTECH Wire

Italy . 782 parts In-Stock

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$19.397

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782

$19.397

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DigiPath Technology Company

USA . 1,967 parts In-Stock

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$2.068

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Corphita

USA . 1,349 parts In-Stock

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Overview

Unlock seamless data transfer with the SN74ACT3642-15PQ by Texas Instruments, a top-tier manufacturer in the industry. This FIFO device guarantees high-quality performance in synchronous mode, with a cycle time of 15 ns and an impressive clock frequency of 66.7 MHz. Perfect for a wide range of applications, this product offers customers unparalleled value and benefits. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations and enhances your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the components inside the FIFO, ensuring a longer lifespan.

Cycle Time: 15 ns

With a fast cycle time of 15 ns, this FIFO can efficiently handle data transfers and processing tasks, making it suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures that data transfers are coordinated and synchronized, leading to reliable and accurate information processing.

Memory Width: 36

With a memory width of 36, this FIFO can handle data in parallel, increasing the efficiency and speed of data processing.

Maximum Clock Frequency (fCLK): 66.7 MHz

The high maximum clock frequency of 66.7 MHz allows for fast data transfer rates, making this FIFO suitable for demanding applications that require quick response times.

Technical Specifications

FIFO SN74ACT3642-15PQ attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

11 ns

Additional Features:

MAILBOX

Maximum Clock Frequency (fCLK):

66.7 MHz

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

36864 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SPQFP132,1.1SQ

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

24.13 mm

Trade Compliance

SN74ACT3642-15PQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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