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SN100KT5573NT

Texas Instruments

SN100KT5573NT by Texas Instruments

SN100KT5573NT by Texas Instruments is a voltage level translator with 8 functions, operating at supply voltages of 4.5V to 5.5V. It features an ECL to TTL interface IC type, with output characteristics in 3-STATE and a max delay of 0ns. This device is ideal for applications requiring precise signal translation in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,058 parts In-Stock

1+ parts

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2,058

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Digiode

USA . 474 parts In-Stock

1+ parts

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474

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 573 parts In-Stock

1+ parts

$4.810

100+ parts

-

1k+ parts

$5.323

10k+ parts

-

573

$4.810

-

$5.323

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ChromeModa Solutions

Germany . 2,843 parts In-Stock

1+ parts

$5.404

100+ parts

$4.431

1k+ parts

-

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2,843

$5.404

$4.431

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IDEA Electronic Components Group

UK . 991 parts In-Stock

1+ parts

$5.404

100+ parts

-

1k+ parts

$4.864

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991

$5.404

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$4.864

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AZTECH Wire

Italy . 667 parts In-Stock

1+ parts

$16.096

100+ parts

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667

$16.096

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One Stop Electronics

USA . 1,491 parts In-Stock

1+ parts

$38.500

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1,491

$38.500

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DigiPath Technology Company

USA . 2,156 parts In-Stock

1+ parts

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100+ parts

$4.872

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2,156

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$4.872

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Corphita

USA . 2,009 parts In-Stock

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2,009

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Overview

Elevate your voltage level translation needs with the SN100KT5573NT by Texas Instruments. With a reputation for superior quality and reliability, this voltage level translator boasts 8 functions and a wide operating temperature range of 0 to 85°C. Perfect for applications requiring ECL to TTL translation, this compact rectangular package delivers true output polarity and 3-state output characteristics. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations. Experience seamless voltage translation with the SN100KT5573NT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, making the product suitable for various environments.

Maximum Supply Voltage: 5.5 V

Allows for compatibility with a wide range of input voltages, making it versatile for different applications.

No. of Functions: 8

Offers multiple functions in a single device, allowing for efficient voltage level translation in complex systems.

Power Supplies (V): 5,-4.5

Supports dual power supplies, enabling flexible voltage operation for different components.

Output Characteristics: 3-STATE

Provides the ability to drive the output into a high-impedance state when needed, enhancing the versatility of the product.

Technology: BIPOLAR

Utilizes bipolar technology for reliable and precise voltage translation, ensuring accurate signal conversion.

Nominal Supply Voltage: 5 V

Operates on a common nominal supply voltage, making it compatible with standard electronic systems.

Maximum Seated Height: 5.08 mm

Has a low profile design, allowing for compact installation in space-constrained applications.

Technical Specifications

Voltage Level Translators SN100KT5573NT attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Maximum Delay:

0 ns

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDIP-T24

Length:

31.64 mm

Nominal Negative Supply Voltage:

-4.5 V

No. of Bits:

1

No. of Functions:

8

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE

Output Latch/Register:

LATCH

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5,-4.5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Level Translators

Maximum Supply Current:

111 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SN100KT5573NT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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