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SN100KT5539DWR

Texas Instruments

SN100KT5539DWR by Texas Instruments

SN100KT5539DWR by Texas Instruments is a voltage level translator with 8 functions, operating b/w 0-85°C. It features open-collector output polarity and ECL to TTL interface IC type. Ideal for applications requiring fast signal translation in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,326 parts In-Stock

1+ parts

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3,326

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Digiode

USA . 725 parts In-Stock

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725

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,365 parts In-Stock

1+ parts

$7.215

100+ parts

-

1k+ parts

$7.718

10k+ parts

-

2,365

$7.215

-

$7.718

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AZTECH Wire

Italy . 792 parts In-Stock

1+ parts

$7.907

100+ parts

-

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792

$7.907

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ChromeModa Solutions

Germany . 6,642 parts In-Stock

1+ parts

$8.107

100+ parts

$6.648

1k+ parts

-

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6,642

$8.107

$6.648

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IDEA Electronic Components Group

UK . 443 parts In-Stock

1+ parts

$8.107

100+ parts

-

1k+ parts

$7.296

10k+ parts

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443

$8.107

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$7.296

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One Stop Electronics

USA . 579 parts In-Stock

1+ parts

$8.500

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579

$8.500

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Corphita

USA . 2,321 parts In-Stock

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2,321

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DigiPath Technology Company

USA . 1,661 parts In-Stock

1+ parts

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100+ parts

$7.309

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1,661

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$7.309

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Overview

Unlock a world of seamless voltage translation with the Texas Instruments SN100KT5539DWR. Crafted with precision and expertise, this voltage level translator boasts unparalleled quality and reliability. Ideal for a wide range of applications, from consumer electronics to industrial automation, this product offers unmatched value and performance. Experience the benefits of smooth signal transmission, efficient power management, and enhanced system compatibility. Elevate your projects with the SN100KT5539DWR and embrace innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability for long-term use.

Surface Mount: YES

Surface mount design allows for easy installation and saves space on the PCB.

Maximum Supply Voltage: 5.5 V

Supports a high maximum supply voltage, providing flexibility for various applications.

No. of Functions: 8

8 functions in one device offer versatility and cost-effectiveness.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and easy to work with for designers.

No. of Terminals: 24

24 terminals allow for multiple connections and compatibility with different devices.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is convenient for compact designs.

Minimum Supply Voltage: 4.5 V

Supports a low minimum supply voltage, suitable for applications with power constraints.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures stability in various environmental conditions.

Output Characteristics: OPEN-COLLECTOR

Open-collector output allows for easy interfacing with other components or systems.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures the device can function in a wide range of temperatures.

Terminal Position: DUAL

Dual terminal position provides flexibility in connecting the device to the PCB.

Maximum Seated Height: 2.65 mm

Low maximum seated height helps in achieving a slim profile for the overall system.

Width: 7.5 mm

Compact width dimension saves space on the PCB for other components.

Output Polarity: TRUE

True output polarity ensures accurate signal transmission between different voltage levels.

Length: 15.4 mm

Standard length dimension fits well within the design constraints of most PCB layouts.

Technology: BIPOLAR

Bipolar technology offers high-speed and reliable performance for voltage level translation.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and assembly on the PCB.

Maximum Supply Current: 114 mA

Supports a high maximum supply current, suitable for applications requiring high power consumption.

Input Characteristics: STANDARD

Standard input characteristics ensure compatibility with various input signal types.

Nominal Supply Voltage: 5 V

Nominal supply voltage of 5V is commonly used in many applications, ensuring compatibility.

Nominal Negative Supply Voltage: -4.5 V

Supports a negative supply voltage, useful for applications requiring dual power supplies.

Maximum Delay: 12.4 ns

Low maximum delay ensures quick response time for signal translation tasks.

Terminal Pitch: 1.27 mm

Standard terminal pitch allows for easy connections on the PCB.

Interface IC Type: ECL TO TTL TRANSLATOR

Specific interface IC type ensures compatibility and seamless integration in ECL to TTL translation applications.

Technical Specifications

Voltage Level Translators SN100KT5539DWR attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Maximum Delay:

12.4 ns

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G24

Length:

15.4 mm

Nominal Negative Supply Voltage:

-4.5 V

No. of Bits:

1

No. of Functions:

8

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-COLLECTOR

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Current:

114 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

SN100KT5539DWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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