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PAL22V10Z-25CJTL

Texas Instruments

PAL22V10Z-25CJTL by Texas Instruments

PAL22V10Z-25CJTL by Texas Instruments is a UV PLD with 10 macro cells, 22 inputs, and 10 outputs. It operates at a max clock frequency of 31.2 MHz and has a propagation delay of 25 ns. Ideal for applications requiring programmable logic devices with fast response times and multiple I/O lines in commercial extended temperature environments.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,748 parts In-Stock

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Vyrian

USA . 2,920 parts In-Stock

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ECAB

Sweden . 32 parts In-Stock

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AZTECH Wire

Italy . 193 parts In-Stock

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$15.326

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One Stop Electronics

USA . 1,605 parts In-Stock

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$33.000

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Parana Technologies

USA . 1,367 parts In-Stock

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$107.583

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$97.901

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$88.218

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DigiPath Technology Company

USA . 1,337 parts In-Stock

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$108.110

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$99.461

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ChromeModa Solutions

Germany . 5,421 parts In-Stock

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$110.316

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$90.459

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IDEA Electronic Components Group

UK . 1,620 parts In-Stock

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$99.284

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Corphita

USA . 4,585 parts In-Stock

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Microchip USA

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Perfect Parts

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Overview

Discover the PAL22V10Z-25CJTL by Texas Instruments, a top-quality Programmable Logic Device that offers unmatched reliability and performance. With its advanced CMOS technology and UV PLD architecture, this device delivers lightning-fast propagation delay of 25 ns and a maximum clock frequency of 31.2 MHz. Ideal for a wide range of applications, from industrial automation to telecommunications, this versatile PLD boasts 10 macro cells and 132 product terms, providing endless possibilities for customization. Trust in Texas Instruments' reputation for excellence and innovation, and elevate your projects with the PAL22V10Z-25CJTL today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and reliability, making the product suitable for various industrial applications.

Propagation Delay: 25 ns

The low propagation delay of 25 ns ensures fast processing speed and efficient performance of the PLD.

Maximum Supply Voltage: 5.25 V

With a maximum supply voltage of 5.25V, the PLD can handle power fluctuations without compromising its functionality.

No. of Macro Cells: 10

Having 10 macro cells allows for complex logic designs to be implemented effectively, making the product versatile for a range of applications.

Technology Used: CMOS

The CMOS technology used in this PLD ensures low power consumption and high noise immunity, resulting in energy-efficient and reliable operation.

No. of Inputs: 22

With 22 inputs, the PLD can accommodate a wide range of input signals, offering flexibility in designing complex logic circuits.

Technical Specifications

Programmable Logic Devices (PLD) PAL22V10Z-25CJTL attributes and parameters. Explore more Programmable Logic Devices (PLD) devices from Texas Instruments

IC Features

Programmable IC Type:

In-System Programmable:

No

Organization:

11 Dedicated Inputs, 10 I/O

No. of Outputs:

10

Output Function:

Macrocell

No. of Inputs:

22

No. of Macro Cells:

10

No. of Product Terms:

132

No. of Dedicated Inputs:

11

No. of I/O Lines:

10

Maximum Clock Frequency:

31.2 MHz

Propagation Delay:

25 ns

Technology:

CMOS

Architecture:

PAL-TYPE

Sub-Category:

Programmable Logic Devices

Additional Features:

PAL with Macrocells; 10 Macrocells; 1 External Clock; Shared Input/Clock

Power Characteristics

Nominal Supply Voltage:

5

Minimum Supply Voltage:

4.75 V

Maximum Supply Voltage:

5.25 V

Power Supplies (V):

5 V

Temperature and Environmental Ratings

Maximum Operating Temperature:

75 °C (167 °F)

Minimum Operating Temperature:

0 °C (32 °F)

Temprature Grade:

Packaging and Physical Characteristics

Package Body Material:

Ceramic, Glass-Sealed

Package Style (Meter):

In-Line

Package Code:

DIP

Package Shape:

Package Equivalence Code:

DIP24,.3

Width:

7.62 mm

Length:

32.005 mm

Maximum Seated Height:

5.08 mm

Packing Method:

Tube

Terminal Characteristcs

Terminal Position:

Dual

Terminal Form:

No. of Terminals:

24

Terminal Pitch:

2.54 mm

Terminal Finish:

Tin Lead

Standards

JESD-30 Code:

R-GDIP-T24

JESD-609 Code:

e0

JTAG Boundary Scan Test:

No

Qualified:

No

Trade Compliance

PAL22V10Z-25CJTL Programmable ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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