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OMAP3530DCBBD

Texas Instruments

OMAP3530DCBBD by Texas Instruments

OMAP3530DCBBD by Texas Instruments is a microprocessor with 32-bit external data bus width and 15-bit address bus width. It operates at a max clock frequency of 38.4 MHz, making it suitable for low power mode applications in various devices like smartphones and tablets.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,980 parts In-Stock

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2,980

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Digiode

USA . 1,238 parts In-Stock

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1,238

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Distributors (Availability)

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AZTECH Wire

Italy . 266 parts In-Stock

1+ parts

$19.067

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266

$19.067

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Parana Technologies

USA . 852 parts In-Stock

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$27.588

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$37.665

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852

$27.588

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$37.665

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DigiPath Technology Company

USA . 2,260 parts In-Stock

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$30.378

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$27.948

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2,260

$30.378

$27.948

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IDEA Electronic Components Group

UK . 1,536 parts In-Stock

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$30.998

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$29.448

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$27.898

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1,536

$30.998

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$27.898

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ChromeModa Solutions

Germany . 51 parts In-Stock

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$30.998

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$25.418

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51

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One Stop Electronics

USA . 259 parts In-Stock

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$32.000

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259

$32.000

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Corphita

USA . 3,822 parts In-Stock

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Overview

Elevate your projects with the OMAP3530DCBBD from Texas Instruments, a top-tier microprocessor that delivers unmatched quality and performance. With integrated cache, a 32-bit external data bus width, and a maximum clock frequency of 38.4 MHz, this powerhouse is perfect for a wide range of applications. From smartphones to industrial automation, this versatile chip offers incredible value and benefits to customers seeking cutting-edge technology. Trust in Texas Instruments' reputation for excellence and choose the OMAP3530DCBBD for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and ease of handling, making the product suitable for various applications.

Integrated Cache: YES

Integrated cache allows for faster data access and improved overall performance of the microprocessor.

Surface Mount: YES

Surface mount design offers better space utilization and heat dissipation, making the product more compact and efficient.

Address Bus Width: 15

With a wider address bus width, the microprocessor can handle larger amounts of memory and data, improving its processing capabilities.

Package Shape: SQUARE

Square package shape allows for easy integration into circuit boards and ensures stable placement during operation.

No. of Terminals: 515

Having a high number of terminals allows for more connections and functionalities, making the microprocessor versatile and adaptable to different requirements.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Grid array style with thin profile and fine pitch improves signal integrity, reduces crosstalk, and enhances overall performance of the microprocessor.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier soldering and better thermal management, ensuring reliable operation of the microprocessor.

Maximum Seated Height: 0.9 mm

Low seated height allows for slim designs and compact assemblies, making the microprocessor suitable for space-constrained applications.

Width: 12 mm

With a moderate width, the microprocessor can be integrated efficiently into various systems and devices without excessive space requirements.

Boundary Scan: YES

Boundary scan capability enhances testing and debug features, ensuring better reliability and ease of maintenance for the microprocessor.

External Data Bus Width: 32

A wider external data bus width allows for faster data transfer and processing, improving the overall speed and efficiency of the microprocessor.

Maximum Clock Frequency: 38.4 MHz

High maximum clock frequency enables swift processing of instructions and tasks, making the microprocessor suitable for high-performance applications.

Length: 12 mm

Moderate length ensures compatibility with standard design layouts and facilitates easy integration of the microprocessor into various systems.

Peripheral IC Type: MICROPROCESSOR, RISC

Being a RISC microprocessor, it offers simplified instruction sets and faster operation, making it ideal for high-speed computing applications.

Technology: CMOS

CMOS technology provides low power consumption, high speed, and excellent noise immunity, enhancing the overall reliability and efficiency of the microprocessor.

Terminal Form: BALL

Ball terminal form offers efficient heat dissipation and ease of soldering, ensuring reliable connections and stable operation of the microprocessor.

Nominal Supply Voltage: 1.15 V

Low nominal supply voltage reduces power consumption and heat generation, making the microprocessor energy-efficient and suitable for battery-powered devices.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for high-density connections and compact designs, improving the overall performance and efficiency of the microprocessor.

Format: FLOATING POINT

Floating-point format enhances numerical precision and enables efficient processing of complex mathematical operations, making the microprocessor suitable for scientific and computational tasks.

Speed: 600 rpm

High speed of 600 rpm allows for swift data processing and computation, improving the overall performance and responsiveness of the microprocessor.

Low Power Mode: YES

Having a low power mode option allows for energy-efficient operation and extended battery life, making the microprocessor suitable for portable and battery-powered devices.

Technical Specifications

Microprocessors OMAP3530DCBBD attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

15

Boundary Scan:

YES

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

Length:

12 mm

Low Power Mode:

YES

No. of Terminals:

515

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.9 mm

Speed:

600 rpm

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

12 mm

Peripheral IC Type:

Trade Compliance

OMAP3530DCBBD Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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