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OMAP3530DCBBA

Texas Instruments

OMAP3530DCBBA by Texas Instruments

OMAP3530DCBBA by Texas Instruments is a 32-bit microprocessor with integrated cache and 16-bit external data bus. It operates at a max clock frequency of 59 MHz, suitable for industrial applications requiring low power mode and floating point format. The package style is grid array with very thin profile, making it ideal for compact designs in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,877 parts In-Stock

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7,877

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Digiode

USA . 1,039 parts In-Stock

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1,039

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Semi Source

USA . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 697 parts In-Stock

1+ parts

$8.868

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697

$8.868

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One Stop Electronics

USA . 1,117 parts In-Stock

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$28.000

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1,117

$28.000

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Parana Technologies

USA . 619 parts In-Stock

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$56.629

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619

$56.629

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DigiPath Technology Company

USA . 1,191 parts In-Stock

1+ parts

$62.355

100+ parts

$57.367

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1,191

$62.355

$57.367

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IDEA Electronic Components Group

UK . 992 parts In-Stock

1+ parts

$63.628

100+ parts

$60.447

1k+ parts

$57.265

10k+ parts

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992

$63.628

$60.447

$57.265

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ChromeModa Solutions

Germany . 201 parts In-Stock

1+ parts

$63.628

100+ parts

$52.175

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201

$63.628

$52.175

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Corphita

USA . 310 parts In-Stock

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310

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Microchip USA

USA . 117 parts In-Stock

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117

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Overview

Experience the power and efficiency of the OMAP3530DCBBA by Texas Instruments, a top-of-the-line microprocessor that is paving the way for cutting-edge technology. With a focus on quality and innovation, Texas Instruments delivers a product that exceeds expectations in performance and reliability. Ideal for a wide range of applications, this microprocessor offers unmatched value and benefits to customers looking for seamless integration, speed, and low power consumption. Upgrade your devices with the OMAP3530DCBBA and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material ensures durability and reliability, making the product suitable for various environments and conditions.

Integrated Cache: YES

Integrated cache enhances the performance of the microprocessor by providing faster access to frequently used instructions and data.

Maximum Supply Voltage: 1.89 V

Higher maximum supply voltage allows for better performance and increased stability of the microprocessor.

Address Bus Width: 26

Wider address bus width allows the microprocessor to access a larger range of memory locations, enabling efficient data processing.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature ensures the microprocessor can function in extreme cold conditions without any performance issues.

Peripheral IC Type: MICROPROCESSOR, RISC

RISC architecture enhances performance and efficiency of the microprocessor by simplifying instruction set and reducing execution time.

Technical Specifications

Microprocessors OMAP3530DCBBA attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

26

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

59 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

JESD-609 Code:

e1

Length:

12 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

515

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA515,28X28,16

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.1,1.2,1.8,1.8/3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Speed:

600 rpm

Sub-Category:

Graphics Processors

Maximum Supply Voltage:

1.89 V

Minimum Supply Voltage:

1.71 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

12 mm

Peripheral IC Type:

Trade Compliance

OMAP3530DCBBA Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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