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OMAP3525DCBCA

Texas Instruments

OMAP3525DCBCA by Texas Instruments

OMAP3525DCBCA by Texas Instruments is a 32-bit microprocessor with integrated cache and 16-bit external data bus. Operating at up to 59 MHz, it features a low power mode and boundary scan capability. Ideal for industrial applications requiring high-speed processing in compact form factors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,619 parts In-Stock

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Digiode

USA . 1,018 parts In-Stock

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1,018

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AZTECH Wire

Italy . 673 parts In-Stock

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$14.557

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Ampacity Inc.

Singapore . 1,164 parts In-Stock

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$17.000

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One Stop Electronics

USA . 632 parts In-Stock

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$27.000

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632

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Parana Technologies

USA . 1,249 parts In-Stock

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$70.473

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DigiPath Technology Company

USA . 1,468 parts In-Stock

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$77.599

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$71.391

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$77.599

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IDEA Electronic Components Group

UK . 1,996 parts In-Stock

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$79.183

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$75.224

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$71.265

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1,996

$79.183

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$71.265

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ChromeModa Solutions

Germany . 383 parts In-Stock

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$79.183

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$64.930

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QUARKTWIN TECHNOLOGY LTD

USA . 19,582 parts In-Stock

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Microchip USA

USA . 3,916 parts In-Stock

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Corphita

USA . 3,208 parts In-Stock

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Overview

Unlock the full potential of your next project with the OMAP3525DCBCA by Texas Instruments. As a leader in microprocessor technology, Texas Instruments guarantees top-notch quality and reliability. This powerful microprocessor is perfect for a wide range of applications, offering integrated cache and low power mode for optimal performance. With a maximum clock frequency of 59 MHz and a wide external data bus width of 16, this product provides exceptional value and efficiency to customers looking to take their projects to the next level. Dare to innovate with the OMAP3525DCBCA and experience unparalleled speed and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the microprocessor, making it suitable for various applications.

Integrated Cache: YES

Having integrated cache improves the performance of the microprocessor by reducing access time to frequently used instructions and data.

Maximum Supply Voltage: 1.89 V

The higher maximum supply voltage allows for efficient power management and performance.

Address Bus Width: 26

With a wide address bus width, the microprocessor can access and manage a larger memory space efficiently.

Bit Size: 32

The 32-bit architecture enables the microprocessor to process data and instructions in larger chunks, improving overall performance.

Minimum Operating Temperature: -40 °C

The wide operating temperature range makes this microprocessor suitable for use in extreme environments.

Peripheral IC Type: MICROPROCESSOR, RISC

Being a RISC-based microprocessor allows for efficient execution of instructions, making it suitable for high-performance computing tasks.

Technology: CMOS

The CMOS technology used in this microprocessor provides low power consumption and high-speed operation.

Technical Specifications

Microprocessors OMAP3525DCBCA attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

26

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

59 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

JESD-609 Code:

e1

Length:

14 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

515

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA515,26X26,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Speed:

600 rpm

Sub-Category:

Graphics Processors

Maximum Supply Voltage:

1.89 V

Minimum Supply Voltage:

1.71 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

OMAP3525DCBCA Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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