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OMAP3525DCBBA

Texas Instruments

OMAP3525DCBBA by Texas Instruments

OMAP3525DCBBA by Texas Instruments is a 32-bit microprocessor with integrated cache and 16-bit external data bus. Operating at up to 59 MHz, it features a low power mode and industrial temperature grade suitability. Ideal for applications requiring high-speed processing in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,100 parts In-Stock

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Digiode

USA . 983 parts In-Stock

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983

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Distributors (Availability)

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AZTECH Wire

Italy . 423 parts In-Stock

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$10.645

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Parana Technologies

USA . 2,331 parts In-Stock

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$18.699

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$18.792

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ChromeModa Solutions

Germany . 5,273 parts In-Stock

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$21.010

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$17.228

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IDEA Electronic Components Group

UK . 1,429 parts In-Stock

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$21.010

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$19.960

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$18.909

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One Stop Electronics

USA . 1,227 parts In-Stock

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$28.000

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$52.296

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$47.589

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$42.883

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$52.296

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Microchip USA

USA . 4,982 parts In-Stock

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Corphita

USA . 4,386 parts In-Stock

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DigiPath Technology Company

USA . 1,020 parts In-Stock

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$18.943

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Overview

Experience cutting-edge technology with the OMAP3525DCBBA by Texas Instruments, a top-tier manufacturer known for its innovative microprocessors. This powerful device offers seamless integration, superior performance, and reliable operation for a wide range of applications. Whether you're looking to enhance your mobile devices, automotive systems, or industrial equipment, this product delivers unmatched value, efficiency, and functionality. Trust in Texas Instruments to provide you with the tools you need to stay ahead of the curve in today's fast-paced world.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices or applications where weight is a concern.

Integrated Cache: YES

Having an integrated cache helps improve the overall performance of the microprocessor by reducing memory access times and increasing data storage capacity.

Maximum Supply Voltage: 1.89 V

The higher maximum supply voltage allows for flexibility in power management and performance optimizations without risking damage to the microprocessor.

Address Bus Width: 26

With a wider address bus width, the microprocessor can access a larger memory space and handle more complex data processing tasks efficiently.

Package Shape: SQUARE

The square package shape provides a compact footprint and efficient use of space, making it suitable for densely packed electronic devices or systems.

Bit Size: 32

The 32-bit architecture allows for faster and more efficient processing of data, making the microprocessor suitable for high-performance computing tasks.

Power Supplies (V): 1.8,3

Support for multiple power supply voltages allows for greater flexibility in designing and optimizing power consumption for various applications or operating conditions.

No. of Terminals: 515

The high number of terminals provides ample connectivity options and interfaces for connecting to other components or peripherals in a system.

Minimum Operating Temperature: -40 °C

With a wide operating temperature range, the microprocessor can perform reliably in extreme environmental conditions, making it suitable for industrial or rugged applications.

External Data Bus Width: 16

The wide external data bus width allows for faster data transfer rates and efficient communication between the microprocessor and external devices or memory modules.

Technical Specifications

Microprocessors OMAP3525DCBBA attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

26

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

59 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

JESD-609 Code:

e1

Length:

12 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

515

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA515,28X28,16

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Speed:

600 rpm

Sub-Category:

Graphics Processors

Maximum Supply Voltage:

1.89 V

Minimum Supply Voltage:

1.71 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

12 mm

Peripheral IC Type:

Trade Compliance

OMAP3525DCBBA Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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