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DRA710BEGCBDQ1

Texas Instruments

DRA710BEGCBDQ1 by Texas Instruments

DRA710BEGCBDQ1 by Texas Instruments is a multi-functional peripheral with 32MHz clock frequency, 538 terminals, and 512K RAM words. Ideal for automotive applications, it supports CAN, Ethernet, I2C, IRDA, PCI, SPI, UART & USB bus compatibility.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,502 parts In-Stock

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Digiode

USA . 1,587 parts In-Stock

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1,587

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Distributors (Availability)

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Northwest PG Solutions

USA . 1,474 parts In-Stock

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$2.542

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1,474

$2.542

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One Stop Electronics

USA . 224 parts In-Stock

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$11.000

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$11.000

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Parana Technologies

USA . 465 parts In-Stock

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$14.103

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$14.568

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465

$14.103

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$14.568

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AZTECH Wire

Italy . 886 parts In-Stock

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$15.370

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886

$15.370

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DigiPath Technology Company

USA . 206 parts In-Stock

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$15.529

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$14.287

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206

$15.529

$14.287

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ChromeModa Solutions

Germany . 4,308 parts In-Stock

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$15.846

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$12.994

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$15.846

$12.994

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IDEA Electronic Components Group

UK . 477 parts In-Stock

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$15.846

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$15.054

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$14.261

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477

$15.846

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$14.261

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Corohmni

South Africa . 246 parts In-Stock

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$62.096

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Microchip USA

USA . 3,979 parts In-Stock

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Corphita

USA . 2,775 parts In-Stock

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Native Components

USA . 350 parts In-Stock

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$2.241

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350

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$2.241

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Overview

Elevate your automotive electronics with the DRA710BEGCBDQ1 by Texas Instruments, a cutting-edge solution in the realm of multi-functional peripherals. Crafted with precision and expertise, this product embodies the quality and reliability that comes with the Texas Instruments name. From CAN to USB, this versatile device is compatible with a wide range of bus interfaces, making it a valuable asset for various applications in the automotive industry. Experience seamless performance and innovative technology with the DRA710BEGCBDQ1, designed to exceed expectations and deliver unparalleled benefits to our customers. Upgrade your systems today and unlock the full potential of your projects with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability while keeping the product lightweight.

Maximum Supply Voltage: 1.2 V

Efficient power consumption and compatibility with various power sources.

Address Bus Width: 16

Allows for efficient communication between components.

Maximum Operating Temperature: 125 °C

Ensures the product can withstand high temperatures without malfunctioning.

RAM Words: 512K

Provides ample memory capacity for storing data and running multiple functions simultaneously.

Maximum Clock Frequency: 32 MHz

Enables fast processing speeds and performance.

Technology: CMOS

Offers low power consumption and high noise immunity for reliable operation.

Technical Specifications

Multi-functional Peripherals DRA710BEGCBDQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B538

JESD-609 Code:

e1

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

186

No. of Terminals:

538

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Words:

512K

Screening Level:

AEC-Q100

Maximum Seated Height:

1.298 mm

Speed:

600 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

17 mm

Trade Compliance

DRA710BEGCBDQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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