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DRA718BJGCBDRQ1

Texas Instruments

DRA718BJGCBDRQ1 by Texas Instruments

DRA718BJGCBDRQ1 by Texas Instruments is a multi-functional peripheral with 32-bit external data bus width, 512K RAM words, and a max clock frequency of 38.4 MHz. Ideal for automotive applications, it features a temperature grade of AUTOMOTIVE and compatibility with CAN, ETHERNET, I2C, IRDA, PCI, SPI, UART, and USB interfaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,400 parts In-Stock

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7,400

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Digiode

USA . 1,954 parts In-Stock

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1,954

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Chip Stock

USA . 750 parts In-Stock

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750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 433 parts In-Stock

1+ parts

$1.040

100+ parts

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433

$1.040

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Northwest PG Solutions

USA . 2,076 parts In-Stock

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$1.144

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2,076

$1.144

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One Stop Electronics

USA . 807 parts In-Stock

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$9.000

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807

$9.000

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AZTECH Wire

Italy . 731 parts In-Stock

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$19.707

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731

$19.707

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Parana Technologies

USA . 325 parts In-Stock

1+ parts

$68.995

100+ parts

$6,407.193

1k+ parts

$62.095

10k+ parts

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325

$68.995

$6,407.193

$62.095

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DigiPath Technology Company

USA . 1,018 parts In-Stock

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$75.972

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1,018

$75.972

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ChromeModa Solutions

Germany . 1,084 parts In-Stock

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$77.522

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$63.568

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1,084

$77.522

$63.568

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IDEA Electronic Components Group

UK . 796 parts In-Stock

1+ parts

$77.522

100+ parts

$73.646

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$69.770

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796

$77.522

$73.646

$69.770

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Corohmni

South Africa . 1,890 parts In-Stock

1+ parts

$83.075

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1,890

$83.075

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Microchip USA

USA . 2,905 parts In-Stock

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2,905

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Corphita

USA . 2,228 parts In-Stock

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Overview

Experience the ultimate in performance and reliability with the DRA718BJGCBDRQ1 by Texas Instruments. As a top-tier manufacturer in the industry, Texas Instruments delivers cutting-edge technology in the form of multi-functional peripherals that cater to various applications. Offering unparalleled value, this product boasts enhanced functionality and efficiency, making it a top choice for customers looking to elevate their projects to new heights. Discover the advantages of Texas Instruments today and unlock a world of possibilities with the DRA718BJGCBDRQ1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and reliability for long-term use.

Surface Mount: YES

Surface mount technology allows for easy installation and maintenance.

Maximum Supply Voltage: 1.2 V

Operates efficiently with a maximum supply voltage of 1.2 V.

Address Bus Width: 16

Wide address bus width allows for fast and efficient data processing.

Screening Level: AEC-Q100

Compliance with AEC-Q100 standards ensures high quality and reliability for automotive applications.

Package Shape: SQUARE

Square package shape allows for compact and space-saving design.

No. of Terminals: 538

Large number of terminals provide flexibility and connectivity options.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Grid array package style with low profile and fine pitch design offers high performance and density.

Minimum Supply Voltage: 1.11 V

Low minimum supply voltage for energy efficiency and optimal performance.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in various environmental conditions.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in extreme conditions.

Terminal Finish: TIN SILVER COPPER

Tin, silver, and copper terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure connections.

Maximum Seated Height: 1.298 mm

Low maximum seated height for compact and slim design.

RAM Words: 512K

Large RAM capacity for efficient data storage and processing.

Width: 17 mm

Compact width for space-saving installation.

Boundary Scan: YES

Boundary scan capability for easy testing and debugging.

External Data Bus Width: 32

Wide external data bus width for high-speed data transfer.

Maximum Clock Frequency: 38.4 MHz

High maximum clock frequency for fast and efficient operation.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time at peak temperature for efficient manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable solder joints.

Length: 17 mm

Compact length for space-efficient design.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating for reliable performance in automotive applications.

Technology: CMOS

CMOS technology for low power consumption and high speed operation.

Terminal Form: BALL

Ball terminal form for secure and reliable connections.

Nominal Supply Voltage: 1.15 V

Stable nominal supply voltage for consistent performance.

Bus Compatibility: CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

Support for multiple bus protocols for versatile connectivity options.

Terminal Pitch: 0.65 mm

Narrow terminal pitch for high-density and compact design.

Moisture Sensitivity Level (MSL): 3

MSL 3 rating for resistance to moisture and environmental factors.

Speed: 1000 rpm

High speed performance for efficient data processing.

No. of I/O Lines: 186

Large number of I/O lines for versatile input and output options.

Technical Specifications

Multi-functional Peripherals DRA718BJGCBDRQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B538

JESD-609 Code:

e1

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

186

No. of Terminals:

538

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Words:

512K

Screening Level:

AEC-Q100

Maximum Seated Height:

1.298 mm

Speed:

1000 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

17 mm

Trade Compliance

DRA718BJGCBDRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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