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DRA712BEGCBDQ1

Texas Instruments

DRA712BEGCBDQ1 by Texas Instruments

DRA712BEGCBDQ1 by Texas Instruments is a multi-functional peripheral with 32MHz clock frequency, 538 terminals, and 262144 RAM words. Ideal for automotive applications, it supports CAN, Ethernet, I2C, IRDA, PCI, SPI, UART & USB bus compatibility. Operating temperature ranges from -40 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,638 parts In-Stock

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4,638

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Vyrian

USA . 4,375 parts In-Stock

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4,375

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One Stop Electronics

USA . 1,061 parts In-Stock

1+ parts

$6.000

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1,061

$6.000

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AZTECH Wire

Italy . 863 parts In-Stock

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$17.289

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863

$17.289

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Corohmni

South Africa . 300 parts In-Stock

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$22.969

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300

$22.969

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Parana Technologies

USA . 1,311 parts In-Stock

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$67.879

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1,311

$67.879

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DigiPath Technology Company

USA . 780 parts In-Stock

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$74.743

100+ parts

$68.763

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780

$74.743

$68.763

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ChromeModa Solutions

Germany . 6,689 parts In-Stock

1+ parts

$76.268

100+ parts

$62.540

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6,689

$76.268

$62.540

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IDEA Electronic Components Group

UK . 1,490 parts In-Stock

1+ parts

$76.268

100+ parts

$72.455

1k+ parts

$68.641

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1,490

$76.268

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$68.641

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Native Components

USA . 678 parts In-Stock

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Northwest PG Solutions

USA . 442 parts In-Stock

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442

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Corphita

USA . 136 parts In-Stock

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Overview

Experience the cutting-edge technology of the DRA712BEGCBDQ1 by Texas Instruments, a high-quality multi-functional peripheral designed for automotive applications. With a wide range of bus compatibility including CAN, Ethernet, and USB, this product offers unparalleled versatility and performance. Manufactured by industry leader Texas Instruments, customers can trust in the reliability and innovation that comes with every purchase. Upgrade your automotive systems today with the DRA712BEGCBDQ1 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring it is easy to handle and has a long lifespan.

Maximum Supply Voltage: 1.2 V

The high maximum supply voltage allows for efficient power usage and performance, making the product reliable in various operating conditions.

Address Bus Width: 16

With a wider address bus width, the product can handle large amounts of data and complex calculations efficiently, enhancing its overall performance.

Package Shape: SQUARE

The square package shape allows for efficient use of space and easy integration into electronic systems, making the product versatile and suitable for different applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures the product can function effectively in demanding environments without overheating or performance issues.

RAM Words: 262144

With a large RAM capacity, the product can store and process a significant amount of data efficiently, enabling high-speed multitasking and performance.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high speed, making it energy-efficient and reliable for long-term use.

Bus Compatibility: CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

The wide range of bus compatibility options allows the product to seamlessly integrate with various communication protocols and devices, enhancing its versatility and usability.

Technical Specifications

Multi-functional Peripherals DRA712BEGCBDQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B538

JESD-609 Code:

e1

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

186

No. of Terminals:

538

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Words:

262144

Screening Level:

AEC-Q100

Maximum Seated Height:

1.298 mm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

17 mm

Trade Compliance

DRA712BEGCBDQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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