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OMAP3530ECBBLPD

Texas Instruments

OMAP3530ECBBLPD by Texas Instruments

OMAP3530ECBBLPD by Texas Instruments features 64K RAM, 16-bit external data bus, and 38.4 MHz clock frequency. Ideal for microprocessor applications requiring low power mode and compatibility with CAN, I2C, IRDA, PCI, SPI, UART, and USB interfaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,691 parts In-Stock

1+ parts

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9,691

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Digiode

USA . 1,435 parts In-Stock

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-

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1,435

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 887 parts In-Stock

1+ parts

$15.500

100+ parts

-

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887

$15.500

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Ampacity Inc.

Singapore . 199 parts In-Stock

1+ parts

$17.000

100+ parts

-

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199

$17.000

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Parana Technologies

USA . 441 parts In-Stock

1+ parts

$27.104

100+ parts

-

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$32.276

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441

$27.104

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$32.276

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ChromeModa Solutions

Germany . 4,011 parts In-Stock

1+ parts

$30.454

100+ parts

$24.972

1k+ parts

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4,011

$30.454

$24.972

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IDEA Electronic Components Group

UK . 140 parts In-Stock

1+ parts

$30.454

100+ parts

$28.931

1k+ parts

$27.409

10k+ parts

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140

$30.454

$28.931

$27.409

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One Stop Electronics

USA . 139 parts In-Stock

1+ parts

$35.000

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-

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139

$35.000

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Corohmni

South Africa . 237 parts In-Stock

1+ parts

$58.085

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237

$58.085

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Component Stockers USA

USA . 233 parts In-Stock

1+ parts

$634.360

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233

$634.360

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Corphita

USA . 3,801 parts In-Stock

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3,801

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DigiPath Technology Company

USA . 337 parts In-Stock

1+ parts

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100+ parts

$27.457

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337

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$27.457

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Overview

Unlock the endless possibilities with the OMAP3530ECBBLPD by Texas Instruments, a multi-functional peripheral powerhouse designed to elevate your projects to new heights. With Texas Instruments' commitment to quality and innovation, this versatile chip opens up a world of applications in various industries. Experience seamless performance, efficiency, and reliability with this cutting-edge technology. Elevate your designs and create products that stand out from the crowd with the OMAP3530ECBBLPD.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, making it easy to transport and less prone to damage.

Integrated Cache: YES

Having an integrated cache helps improve the overall performance of the product by reducing data access times and speeding up processing.

Maximum Supply Voltage: 1.4175 V

This ensures that the product can handle higher voltage inputs, providing stability and reliability during operation.

Minimum Supply Voltage: 1.2825 V

The low minimum supply voltage allows the product to operate efficiently even with lower power sources, making it energy efficient.

Maximum Operating Temperature: 90 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without overheating or malfunctioning.

Peripheral IC Type: MICROPROCESSOR, RISC

This type of IC offers faster processing speeds and efficient power consumption, making the product ideal for multitasking and demanding applications.

Technical Specifications

Multi-functional Peripherals OMAP3530ECBBLPD attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

26

Boundary Scan:

YES

Bus Compatibility:

CAN; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

16

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

JESD-609 Code:

e1

Length:

12 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

188

No. of Terminals:

515

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Words:

64K

Maximum Seated Height:

.9 mm

Speed:

720 rpm

Maximum Supply Voltage:

1.4175 V

Minimum Supply Voltage:

1.2825 V

Nominal Supply Voltage:

1.35 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Peripheral IC Type:

Trade Compliance

OMAP3530ECBBLPD Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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