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DRA725AGGABCRQ1

Texas Instruments

DRA725AGGABCRQ1 by Texas Instruments

DRA725AGGABCRQ1 by Texas Instruments is a multi-functional peripheral with 32-bit external data bus width, 760 terminals, and 512K RAM words. Ideal for automotive applications, this microprocessor features a max clock frequency of 38.4 MHz and operates in a temperature range from -40 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,817 parts In-Stock

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Digiode

USA . 1,057 parts In-Stock

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1,057

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Distributors (Availability)

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AZTECH Wire

Italy . 731 parts In-Stock

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$8.162

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731

$8.162

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One Stop Electronics

USA . 500 parts In-Stock

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$25.000

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500

$25.000

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Corohmni

South Africa . 685 parts In-Stock

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$28.478

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685

$28.478

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Parana Technologies

USA . 1,343 parts In-Stock

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$51.402

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$51.402

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ChromeModa Solutions

Germany . 3,956 parts In-Stock

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$57.755

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$47.359

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$57.755

$47.359

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IDEA Electronic Components Group

UK . 1,219 parts In-Stock

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$57.755

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$54.867

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$51.980

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1,219

$57.755

$54.867

$51.980

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Corphita

USA . 4,580 parts In-Stock

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Northwest PG Solutions

USA . 1,616 parts In-Stock

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DigiPath Technology Company

USA . 1,283 parts In-Stock

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$52.072

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Microchip USA

USA . 1,055 parts In-Stock

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Native Components

USA . 690 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the DRA725AGGABCRQ1. This versatile multi-functional peripheral is designed to meet the demands of automotive applications, offering advanced features and high performance. With a focus on innovation and cutting-edge technology, Texas Instruments delivers a product that exceeds expectations and provides value to customers. Trust in Texas Instruments for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the multi-functional peripheral, ensuring a longer lifespan.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the multi-functional peripheral can handle extended usage without overheating or performance issues.

Bus Compatibility: CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

The wide range of bus compatibility options allows the multi-functional peripheral to easily connect with various devices and networks, enhancing its versatility and usability.

Moisture Sensitivity Level (MSL): 3

The moderate moisture sensitivity level ensures that the multi-functional peripheral can function reliably in different environmental conditions without damage from moisture.

Technical Specifications

Multi-functional Peripherals DRA725AGGABCRQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

S-PBGA-B760

JESD-609 Code:

e1

Length:

23 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

215

No. of Terminals:

760

On Chip Data RAM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

RAM Words:

512K

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Speed:

1176 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA725AGGABCRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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