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DRA725AGGABCQ1

Texas Instruments

DRA725AGGABCQ1 by Texas Instruments

The Texas Instruments DRA725AGGABCQ1 is a multi-functional peripheral with 760 terminals, 512K RAM words, and a max clock frequency of 38.4 MHz. Ideal for automotive applications, this microprocessor supports various bus compatibilities like CAN, Ethernet, and USB while operating at temperatures ranging from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,221 parts In-Stock

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Digiode

USA . 3,775 parts In-Stock

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AZTECH Wire

Italy . 373 parts In-Stock

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$5.347

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373

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One Stop Electronics

USA . 612 parts In-Stock

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$10.000

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Parana Technologies

USA . 1,695 parts In-Stock

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$70.828

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$70.828

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Corohmni

South Africa . 2,120 parts In-Stock

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$75.414

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$75.414

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DigiPath Technology Company

USA . 1,570 parts In-Stock

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$77.990

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$77.990

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IDEA Electronic Components Group

UK . 2,027 parts In-Stock

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$79.582

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$75.603

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$71.624

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2,027

$79.582

$75.603

$71.624

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ChromeModa Solutions

Germany . 1,216 parts In-Stock

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$79.582

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$65.257

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Component Stockers USA

USA . 497 parts In-Stock

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$99.990

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Corphita

USA . 4,373 parts In-Stock

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Microchip USA

USA . 1,604 parts In-Stock

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Northwest PG Solutions

USA . 862 parts In-Stock

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Native Components

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Overview

Enhance your automotive electronics with the Texas Instruments DRA725AGGABCQ1, a top-of-the-line multi-functional peripheral that offers unparalleled quality and reliability. Manufactured by a trusted industry leader, this versatile component is designed to meet the highest standards of performance and durability. With a wide range of applications in automotive systems, the DRA725AGGABCQ1 delivers exceptional value by providing efficient data processing, seamless connectivity, and advanced functionality. Elevate your projects with this innovative solution and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable, lightweight, and cost-effective, making the product suitable for various applications.

Maximum Supply Voltage: 1.2 V

Low maximum supply voltage allows for efficient power consumption, making the product energy-efficient.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures the product can withstand harsh environmental conditions without compromising performance.

Peripheral IC Type: MICROPROCESSOR, RISC

RISC microprocessor technology enhances processing speed and efficiency, making the product ideal for multitasking and high-performance applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product reliable and energy-efficient.

Technical Specifications

Multi-functional Peripherals DRA725AGGABCQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

S-PBGA-B760

JESD-609 Code:

e1

Length:

23 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

215

No. of Terminals:

760

On Chip Data RAM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

RAM Words:

512K

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Speed:

1176 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA725AGGABCQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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