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OMAP3530ECBBALPD

Texas Instruments

OMAP3530ECBBALPD by Texas Instruments

OMAP3530ECBBALPD by Texas Instruments is a multi-functional peripheral with 64K RAM, 16-bit external data bus width, and 38.4 MHz clock frequency. Ideal for industrial applications requiring a microprocessor with low power mode, it supports various bus compatibilities like CAN, I2C, IRDA, PCI, SPI, UART, and USB.

Median Price

$66.960

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$66.960

100+ parts

-

1k+ parts

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10

$66.960

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Vyrian

USA . 3,461 parts In-Stock

1+ parts

-

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-

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3,461

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Digiode

USA . 746 parts In-Stock

1+ parts

-

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746

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 540 parts In-Stock

1+ parts

$18.671

100+ parts

-

1k+ parts

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540

$18.671

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One Stop Electronics

USA . 272 parts In-Stock

1+ parts

$22.000

100+ parts

-

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272

$22.000

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Ampacity Inc.

Singapore . 437 parts In-Stock

1+ parts

$28.000

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-

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437

$28.000

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Corohmni

South Africa . 10 parts In-Stock

1+ parts

$38.365

100+ parts

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10

$38.365

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Parana Technologies

USA . 309 parts In-Stock

1+ parts

$57.699

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309

$57.699

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DigiPath Technology Company

USA . 407 parts In-Stock

1+ parts

$63.533

100+ parts

-

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407

$63.533

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ChromeModa Solutions

Germany . 2,260 parts In-Stock

1+ parts

$64.830

100+ parts

$53.161

1k+ parts

-

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2,260

$64.830

$53.161

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IDEA Electronic Components Group

UK . 769 parts In-Stock

1+ parts

$64.830

100+ parts

$61.588

1k+ parts

$58.347

10k+ parts

-

769

$64.830

$61.588

$58.347

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Continental Prestige Electronics

USA . 3,211 parts In-Stock

1+ parts

$66.960

100+ parts

-

1k+ parts

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10k+ parts

$65.621

3,211

$66.960

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$65.621

Corphita

USA . 1,855 parts In-Stock

1+ parts

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1,855

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Argo Parts USA

USA . 953 parts In-Stock

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953

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Overview

Discover the OMAP3530ECBBALPD by Texas Instruments, a cutting-edge multi-functional peripheral that delivers unparalleled performance and reliability. With Texas Instruments' reputation for excellence in technology, this product is designed to meet the demands of various applications. Offering high value and benefits to customers, this innovative device boasts integrated cache, low power mode, and compatibility with multiple bus interfaces. Experience the advantage of top-notch quality and advanced features with the OMAP3530ECBBALPD, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides lightweight and durable construction for easy handling and long-term use.

Integrated Cache: YES

Improves system performance by storing frequently accessed data for quick retrieval.

Maximum Supply Voltage: 1.4175 V

Supports efficient power delivery for optimal device operation.

Address Bus Width: 26

Allows for a larger memory address space, enhancing processing capabilities.

No. of Terminals: 515

Enables connectivity to various components and peripherals for versatile functionality.

Minimum Operating Temperature: -40 °C

Ensures reliable operation even in extreme cold environments.

Maximum Clock Frequency: 38.4 MHz

Supports fast data processing and execution speeds for efficient multitasking.

Technical Specifications

Multi-functional Peripherals OMAP3530ECBBALPD attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

26

Boundary Scan:

YES

Bus Compatibility:

CAN; I2C; IRDA; PCI; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

16

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B515

JESD-609 Code:

e1

Length:

12 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

188

No. of Terminals:

515

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Words:

64K

Maximum Seated Height:

.9 mm

Speed:

720 rpm

Maximum Supply Voltage:

1.4175 V

Minimum Supply Voltage:

1.2825 V

Nominal Supply Voltage:

1.35 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Peripheral IC Type:

Trade Compliance

OMAP3530ECBBALPD Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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