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DRA773PSGACDQ1

Texas Instruments

DRA773PSGACDQ1 by Texas Instruments

DRA773PSGACDQ1 by Texas Instruments is a multi-functional peripheral with 32-bit address bus width and 64-bit external data bus width. It operates at a max clock frequency of 38.4 MHz, making it suitable for automotive applications requiring high-speed processing. With a package style of grid array and low profile, this device offers advanced features for CAN, Ethernet, I2C, SPI, UART, and USB bus compatibility.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,510 parts In-Stock

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Digiode

USA . 4,837 parts In-Stock

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Bristol Electronics

USA . 4,524 parts In-Stock

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Native Components

USA . 471 parts In-Stock

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$1.680

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471

$1.680

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Northwest PG Solutions

USA . 746 parts In-Stock

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$1.848

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746

$1.848

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AZTECH Wire

Italy . 233 parts In-Stock

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$18.707

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One Stop Electronics

USA . 920 parts In-Stock

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$23.000

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920

$23.000

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Corohmni

South Africa . 5 parts In-Stock

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$47.772

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5

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Parana Technologies

USA . 113 parts In-Stock

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$76.408

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ChromeModa Solutions

Germany . 6,229 parts In-Stock

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$85.852

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$70.399

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$85.852

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IDEA Electronic Components Group

UK . 1,945 parts In-Stock

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$85.852

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$81.559

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$77.267

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Corphita

USA . 3,967 parts In-Stock

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Microchip USA

USA . 2,811 parts In-Stock

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DigiPath Technology Company

USA . 1,914 parts In-Stock

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$77.404

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Overview

Upgrade your automotive electronics with the cutting-edge DRA773PSGACDQ1 by Texas Instruments. Designed with precision and expertise, this multi-functional peripheral offers unparalleled performance and reliability for a wide range of applications. Whether you're looking to enhance your vehicle's connectivity or streamline its operations, this product delivers exceptional value with its advanced features and quality craftsmanship. Trust Texas Instruments to provide you with the best-in-class solutions that exceed your expectations. Elevate your driving experience today with the DRA773PSGACDQ1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a wide range of applications.

Maximum Supply Voltage: 1.2 V

Efficient power usage, reducing energy costs and environmental impact.

RAM Words: 2.5M

High memory capacity allows for efficient storage and processing of data.

Width: 23 mm

Compact size for space-saving installation and portability.

Bus Compatibility: CAN; ETHERNET; I2C; SPI; UART; USB

Versatile connectivity options for seamless integration with various devices and systems.

Technical Specifications

Multi-functional Peripherals DRA773PSGACDQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

32

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

64

JESD-30 Code:

S-PBGA-B784

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

247

No. of Terminals:

784

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

250

RAM Words:

2.5M

Screening Level:

AEC-Q100

Maximum Seated Height:

1.63 mm

Speed:

1800 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Trade Compliance

DRA773PSGACDQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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