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CSD13306WT

Texas Instruments

CSD13306WT by Texas Instruments

CSD13306WT by Texas Instruments is a N-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3.5A Drain Current, 0.0155 ohm On Resistance, and 294pF Feedback Capacitance. Operating from -55 to 150 °C, it's a versatile choice for various electronic designs.

Median Price

$0.608

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 205 parts In-Stock

1+ parts

$0.649

100+ parts

$0.410

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-

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205

$0.649

$0.410

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Texas Instruments

USA . 3,541 parts In-Stock

1+ parts

$0.924

100+ parts

$0.628

1k+ parts

$0.322

10k+ parts

-

3,541

$0.924

$0.628

$0.322

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DigiKey

USA . 1,126 parts In-Stock

1+ parts

$1.650

100+ parts

$0.699

1k+ parts

$0.522

10k+ parts

$0.410

1,126

$1.650

$0.699

$0.522

$0.410

Mouser Electronics

USA . 492 parts In-Stock

1+ parts

$1.670

100+ parts

$0.608

1k+ parts

$0.469

10k+ parts

$0.460

492

$1.670

$0.608

$0.469

$0.460

RS (Exports)

UK . 300 parts In-Stock

1+ parts

-

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$0.566

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$0.537

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300

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$0.566

$0.537

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Arrow

USA . 250 parts In-Stock

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$0.394

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$0.394

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Rochester

USA . 250 parts In-Stock

1+ parts

-

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$0.547

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$0.454

10k+ parts

$0.405

250

-

$0.547

$0.454

$0.405

Verical

USA . 204 parts In-Stock

1+ parts

-

100+ parts

$0.105

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204

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$0.105

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Distributors (In-Stock)

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Digiode

USA . 996 parts In-Stock

1+ parts

$0.425

100+ parts

-

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996

$0.425

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Bristol Electronics

USA . 142 parts In-Stock

1+ parts

$1.125

100+ parts

$0.450

1k+ parts

$0.416

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142

$1.125

$0.450

$0.416

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Chip Stock

USA . 22,910 parts In-Stock

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Vyrian

USA . 412 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Semicontronic

India . 485 parts In-Stock

1+ parts

$0.151

100+ parts

$0.147

1k+ parts

$0.146

10k+ parts

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485

$0.151

$0.147

$0.146

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Ampacity Inc.

Singapore . 383 parts In-Stock

1+ parts

$0.345

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383

$0.345

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Corphita

USA . 1,132 parts In-Stock

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$0.402

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1,132

$0.402

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Parana Technologies

USA . 2,049 parts In-Stock

1+ parts

$0.746

100+ parts

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1k+ parts

$1.754

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2,049

$0.746

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$1.754

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DigiPath Technology Company

USA . 1,480 parts In-Stock

1+ parts

$0.821

100+ parts

$0.756

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1,480

$0.821

$0.756

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ChromeModa Solutions

Germany . 5,501 parts In-Stock

1+ parts

$0.838

100+ parts

$0.687

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5,501

$0.838

$0.687

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IDEA Electronic Components Group

UK . 1,753 parts In-Stock

1+ parts

$0.838

100+ parts

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1k+ parts

$0.754

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1,753

$0.838

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$0.754

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Corohmni

South Africa . 300 parts In-Stock

1+ parts

$1.581

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$1.581

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A-Z Elektronik GmbH

Germany . 4,246 parts In-Stock

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Lixinc

USA . 3,198 parts In-Stock

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Perfect Parts

USA . 2,800 parts In-Stock

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Continental Prestige Electronics

USA . 1,985 parts In-Stock

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Argo Parts USA

USA . 1,157 parts In-Stock

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Allen Electronics Distributors

USA . 500 parts In-Stock

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$0.660

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500

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$0.660

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Experience the next level of performance with the CSD13306WT by Texas Instruments. As a leading manufacturer in small signal field effect transistors, Texas Instruments delivers top-notch quality and reliability. Ideal for switching applications, this N-channel transistor offers enhanced functionality and efficiency. With a built-in diode and a maximum drain current of 3.5A, this transistor provides unmatched value and benefits to customers looking for high-quality components. Upgrade your electronic projects with the CSD13306WT and discover the difference Texas Instruments can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and resistance to external factors, making this FET a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity offers efficient current control and enhanced performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for simplified circuit design and protects the transistor from voltage spikes, increasing its reliability.

Transistor Application: SWITCHING

Designed for switching applications, this FET provides fast response times and high efficiency in controlling electronic signals.

Surface Mount: YES

Surface mount capability enables easy and compact integration onto printed circuit boards, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 12 V

With a minimum breakdown voltage of 12V, this FET can handle higher voltages, ensuring stable operation and protection against overloads.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space and easy alignment during assembly, making it suitable for compact electronic devices.

Terminal Form: BALL

Ball terminals provide reliable connections and facilitate automated assembly processes, ensuring consistent performance and ease of installation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers precise control over the transistor's conductivity, allowing for efficient switching and reduced power consumption.

No. of Terminals: 6

6 terminals provide versatile connectivity options and ensure secure connections, enhancing the functionality and reliability of the transistor.

Package Style (Meter): GRID ARRAY

Grid array package style offers easy PCB mounting and secure placement, making it suitable for high-density applications and ensuring stable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures high performance, low power consumption, and reliable operation in various electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high temperature environments, ensuring reliability in extreme conditions.

Transistor Element Material: SILICON

Silicon material offers high frequency response, low noise, and reliable performance, making this FET an excellent choice for sensitive electronic applications.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this FET can operate in cold environments without compromising performance, making it suitable for a wide range of applications.

Terminal Finish: TIN SILVER COPPER

TIN SILVER COPPER terminal finish provides excellent conductivity, corrosion resistance, and solderability, ensuring long-term reliability and secure connections.

Maximum Drain Current (ID): 3.5 A

With a maximum drain current of 3.5A, this FET can handle high current loads, making it suitable for power switching applications and ensuring efficient operation.

Maximum Drain-Source On Resistance: 0.0155 ohm

Low drain-source on resistance ensures minimal power loss and high efficiency in current conduction, making this FET ideal for high-performance electronic circuits.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and reliable connections, ensuring stable operation and efficient heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this FET is suitable for automated assembly processes, ensuring consistent quality and reliability.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures reliable soldering and secure connections, making this FET suitable for high-temperature applications.

Maximum Feedback Capacitance (Crss): 294 pF

Low feedback capacitance ensures high-speed switching and minimal signal distortion, making this FET suitable for high-frequency applications and ensuring accurate signal processing.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD13306WT attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ULTRA LOW RESISTANCE

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.0155 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

294 pF

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD13306WT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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