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CSD13306W

Texas Instruments

CSD13306W by Texas Instruments

CSD13306W by Texas Instruments is a N-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3.5A ID and 0.0155 ohm RDS(ON), operating from -55 to 150°C. With a GRID ARRAY package style, it offers ENHANCEMENT MODE operation in a PLASTIC/EPOXY body for surface mount assembly.

Median Price

$0.750

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 18,968 parts In-Stock

1+ parts

$0.290

100+ parts

$0.197

1k+ parts

$0.101

10k+ parts

-

18,968

$0.290

$0.197

$0.101

-

Mouser Electronics

USA . 962 parts In-Stock

1+ parts

$0.750

100+ parts

$0.301

1k+ parts

$0.205

10k+ parts

$0.145

962

$0.750

$0.301

$0.205

$0.145

DigiKey

USA . 2,631 parts In-Stock

1+ parts

$0.800

100+ parts

$0.320

1k+ parts

$0.220

10k+ parts

$0.146

2,631

$0.800

$0.320

$0.220

$0.146

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.199

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.199

-

-

-

Digiode

USA . 4,650 parts In-Stock

1+ parts

$0.276

100+ parts

-

1k+ parts

-

10k+ parts

-

4,650

$0.276

-

-

-

Chip Stock

USA . 24,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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24,500

-

-

-

-

Vyrian

USA . 8,082 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,082

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,156 parts In-Stock

1+ parts

$0.199

100+ parts

-

1k+ parts

-

10k+ parts

$0.193

4,156

$0.199

-

-

$0.193

Continental Prestige Electronics

USA . 1,212 parts In-Stock

1+ parts

$0.199

100+ parts

-

1k+ parts

-

10k+ parts

$0.195

1,212

$0.199

-

-

$0.195

Ampacity Inc.

Singapore . 7,723 parts In-Stock

1+ parts

$0.246

100+ parts

-

1k+ parts

-

10k+ parts

-

7,723

$0.246

-

-

-

Semicontronic

India . 7,719 parts In-Stock

1+ parts

$0.246

100+ parts

$0.240

1k+ parts

$0.239

10k+ parts

-

7,719

$0.246

$0.240

$0.239

-

Corphita

USA . 1,731 parts In-Stock

1+ parts

$0.261

100+ parts

-

1k+ parts

-

10k+ parts

-

1,731

$0.261

-

-

-

Parana Technologies

USA . 2,290 parts In-Stock

1+ parts

$0.608

100+ parts

-

1k+ parts

$1.685

10k+ parts

-

2,290

$0.608

-

$1.685

-

DigiPath Technology Company

USA . 539 parts In-Stock

1+ parts

$0.669

100+ parts

$0.616

1k+ parts

-

10k+ parts

-

539

$0.669

$0.616

-

-

ChromeModa Solutions

Germany . 2,156 parts In-Stock

1+ parts

$0.683

100+ parts

$0.560

1k+ parts

-

10k+ parts

-

2,156

$0.683

$0.560

-

-

IDEA Electronic Components Group

UK . 329 parts In-Stock

1+ parts

$0.683

100+ parts

-

1k+ parts

$0.615

10k+ parts

-

329

$0.683

-

$0.615

-

Corohmni

South Africa . 152 parts In-Stock

1+ parts

$1.227

100+ parts

-

1k+ parts

-

10k+ parts

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152

$1.227

-

-

-

Lixinc

USA . 8,903 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,903

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-

-

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A-Z Elektronik GmbH

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,000

-

-

-

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Kepictronics

USA . 1,639 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,639

-

-

-

-

Overview

Experience the seamless performance and reliability of the CSD13306W by Texas Instruments. As a leading manufacturer, Texas Instruments guarantees top-notch quality in their Small Signal Field Effect Transistors. With applications in switching, this N-CHANNEL transistor offers unparalleled value with its built-in diode, enhancing efficiency for your electronic projects. Say goodbye to compromises and hello to superior performance with the CSD13306W.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient performance in applications where N-channel transistors are required.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with a built-in diode for certain applications, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and precise operation.

Surface Mount: YES

Allows for easy and efficient PCB assembly, ideal for mass production and compact designs.

Minimum DS Breakdown Voltage: 12 V

Suitable for low voltage applications, providing reliable performance within the specified voltage range.

Package Shape: RECTANGULAR

Compact and space-saving design for efficient placement on a PCB.

Maximum Drain Current (ID): 3.5 A

Capable of handling high current loads, making it suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 0.0155 ohm

Low on-state resistance for efficient power management and reduced heat dissipation.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in different environments.

Minimum Operating Temperature: -55 °C

Able to operate in low temperature conditions without compromising performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD13306W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ULTRA LOW RESISTANCE

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.0155 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

294 pF

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD13306W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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